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Magnetron sputtering device and control method thereof

A technology of a magnetron sputtering device and a sputtering chamber, which is applied in the field of sputtering and can solve the problems of small amount of sputtering and low overall utilization rate of the target material.

Pending Publication Date: 2021-12-07
北海惠科半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of this application is to provide a magnetron sputtering device and its control method, which can improve the problem that the sputtering amount in the edge area of ​​the target is small and the overall utilization rate of the target is low.

Method used

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  • Magnetron sputtering device and control method thereof
  • Magnetron sputtering device and control method thereof
  • Magnetron sputtering device and control method thereof

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Embodiment Construction

[0029] It should be understood that the terminology and specific structural and functional details disclosed herein are representative only for describing specific embodiments, but the application can be embodied in many alternative forms and should not be construed as merely Be limited by the examples set forth herein.

[0030] In the description of the present application, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating relative importance, or implicitly indicating the quantity of indicated technical features. Therefore, unless otherwise specified, the features defined as "first" and "second" may explicitly or implicitly include one or more of these features; "plurality" means two or more. The term "comprising" and any variations thereof mean non-exclusive inclusion, possible presence or addition of one or more other features, integers, steps, operations, units, components and / or combinations thereof.

[0031] Al...

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Abstract

The invention discloses a magnetron sputtering device and a control method thereof. The magnetron sputtering device comprises a magnetic field regulator, and the magnetic field regulator comprises a first cavity and a magnet group structure arranged in the first cavity. The magnet group structure comprises a first magnet, a second magnet, a third magnet, a first spacing control structure and a second spacing control structure, the second magnet is located between the first magnet and the third magnet, the magnetic pole of the top of the first magnet is the same as that of the top of the third magnet, the magnetic pole of the top of the second magnet is opposite to that of the top of the first magnet, and the first spacing control structure is connected with the first magnet and the second magnet and used for controlling the spacing between the first magnet and the second magnet. The second spacing control structure is connected with the second magnet and the third magnet and is used for controlling the spacing between the second magnet and the third magnet. By changing the radius of edge magnet circular motion, the size of a sputtering area on the surface of a target material is controllable, and the sputtering rate of a small-size wafer is increased.

Description

technical field [0001] The present application relates to the field of sputtering technology, in particular to a magnetron sputtering device and a control method thereof. Background technique [0002] Magnetron sputtering devices are widely used in the processing of integrated circuits. Magnetron sputtering coatings are based on two-pole DC sputtering and apply an orthogonal electromagnetic field above the target. The magnetic field constrains electrons to move spirally around the target surface. , a method to increase the probability of electrons colliding with argon, and improve the gas ionization rate and sputtering yield. [0003] Due to its excellent controllability and film bonding force, it is widely used in semiconductor manufacturing processes. Among the many characteristics of the film, the uniformity is an important index to measure the quality of the film and the performance of the machine. The uniformity of the film is related to many factors, including gas uni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/56C23C14/54
CPCC23C14/35C23C14/56C23C14/54
Inventor 张浩王国峰杨忠武
Owner 北海惠科半导体科技有限公司
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