Aluminum-silicon target material and preparation method thereof

An aluminum-silicon target and leveling technology, applied in the field of magnetron sputtering, can solve the problems of inability to realize large-scale production, high requirements for production equipment, and insufficient grain refinement, so as to improve the uniformity of thickness distribution and avoid deformation and crack tendency, the effect of internal grain refinement

Active Publication Date: 2021-12-10
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the internal grains of the material are not refined enough, and the requirements for production equipment are very high, and large-scale production cannot be realized.

Method used

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  • Aluminum-silicon target material and preparation method thereof
  • Aluminum-silicon target material and preparation method thereof
  • Aluminum-silicon target material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0055] This embodiment provides an aluminum-silicon target and its preparation method, the preparation method comprising the following steps:

[0056] (1) First forging: preheating at 150°C, stretching to 195% of the original length of the aluminum-silicon target blank, and then water cooling;

[0057] (2) The first heat treatment: heat treatment at 490°C for 15 minutes, and then water cooling;

[0058] (3) Second forging: Preheat at 150°C, thicken to 105% of the original length of the aluminum-silicon target blank, and stretch to 195% of the original length of the aluminum-silicon target blank, and then water-cool;

[0059] (4) Second heat treatment: heat treatment at 390°C for 15 minutes, and then water cooling;

[0060] (5) Pressing: the first pressing to 50% of the original length of the aluminum-silicon target blank; the second pressing to 40% of the original length of the aluminum-silicon target blank;

[0061] (6) The third heat treatment: heat treatment at 350°C for ...

Embodiment 2

[0065] This embodiment provides an aluminum-silicon target and its preparation method, the preparation method comprising the following steps:

[0066] (1) First forging: preheating at 140°C, stretching to 180% of the original length of the aluminum-silicon target blank, and then water cooling;

[0067] (2) The first heat treatment: heat treatment at 485°C for 20 minutes, and then water cooling;

[0068] (3) Second forging: Preheat at 140°C, thicken to 100% of the original length of the aluminum-silicon target blank, and stretch to 185% of the original length of the aluminum-silicon target blank, and then water-cool;

[0069] (4) Second heat treatment: heat treatment at 385°C for 20 minutes, and then water cooling;

[0070] (5) Pressing: the first pressing to 45% of the original length of the aluminum-silicon target blank; the second pressing to 35% of the original length of the aluminum-silicon target blank;

[0071] (6) The third heat treatment: heat treatment at 345°C for ...

Embodiment 3

[0075] This embodiment provides an aluminum-silicon target and its preparation method, the preparation method comprising the following steps:

[0076] (1) First forging: Preheat at 160°C, stretch to 210% of the original length of the aluminum-silicon target blank, and then water-cool;

[0077] (3) The first heat treatment: heat treatment at 495°C for 10 minutes, and then water cooling;

[0078] (4) Second forging: Preheat at 160°C, thicken to 110% of the original length of the aluminum-silicon target blank, and stretch to 205% of the original length of the aluminum-silicon target blank, and then water-cool;

[0079] (5) Second heat treatment: heat treatment at 395°C for 10 minutes, and then water cooling;

[0080] (6) Pressing: the first pressing to 55% of the original length of the aluminum-silicon target blank; the second pressing to 45% of the original length of the aluminum-silicon target blank;

[0081] (7) The third heat treatment: heat treatment at 355°C for 10 minute...

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Abstract

The invention provides an aluminum-silicon target material and a preparation method thereof. The preparation method comprises the following steps that first forging and stretching, first heat treatment, second forging and stretching, second heat treatment, pressing and third heat treatment are sequentially carried out on an aluminum-silicon target blank; and the preheating temperature of the first forging stretching and the preheating temperature of the second forging stretching are 140-160 DEG C respectively. According to the preparation method, the internal defects of the aluminum-silicon target material are reduced, the abnormal phenomenon of a grain structure is avoided, the internal grain refinement degree is improved, the energy consumption and the cost can be reduced, the grain size of the prepared aluminum-silicon target material does not exceed 18 [mu]m, the internal structure is uniform, and the aluminum-silicon target material is suitable for large-scale popularization.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering, and relates to a sputtering target, in particular to an aluminum-silicon target and a preparation method thereof. Background technique [0002] Magnetron sputtering is a kind of physical vapor deposition. Its working principle is that electrons collide with argon atoms during the process of accelerating and flying to the substrate under the action of an electric field, ionizing a large number of argon atoms and electrons, and the electrons fly to the substrate. Argon ions accelerate the bombardment of the target on the target assembly on the sputtering base under the action of the electric field, sputtering a large number of target atoms, and the neutral target atoms are deposited on the substrate to form a film, and finally achieve the target The purpose of coating the substrate surface. With the rapid development of the semiconductor field, the application of sputtering targets is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B21J5/00C22F1/043
CPCC23C14/3414C23C14/3407B21J5/002C22F1/043
Inventor 姚力军潘杰边逸军王学泽章丽娜罗明浩
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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