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High-brightness and high-reliability Micro-LED display device

A display device, high-brightness technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of complex driving, photo-generated leakage current, inappropriate transparent display, etc., to avoid complex compensation circuits and improve the stability of electrical characteristics. , the effect of avoiding the problem of characteristic drift

Pending Publication Date: 2021-12-10
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The CMOS backplane is produced by the integrated circuit wafer process, which can achieve a pixel pitch of 5 microns or less and high-resolution Micro-LED display, but there are several shortcomings: first, it is produced by the integrated circuit wafer process, The cost of driving the backplane is high; second, limited by the size of the wafer, it is impossible to realize large-size display; third, because the CMOS backplane is based on silicon material, it cannot transmit light, so it is not suitable for transparent display
The TFT backplane can be produced in a large area, and the substrate is made of glass, which can realize transparent display, but there are several deficiencies: first, due to the limited current of TFT, it is difficult to realize high-brightness Micro-LED display; second, Micro-LED The heat emitted by the chip needs to be dissipated by the TFT backplane for heat dissipation, which will cause the temperature of the TFT device on the TFT backplane to rise and cause I-V characteristic drift; third, the light emitted by the Micro-LED chip illuminates the TFT backplane, which will cause TFT devices generate light-generated leakage currents, and I-V characteristic drift occurs; Fourth, the TFT backplane needs to adopt at least 2T1C structure, that is, each pixel needs 1 TFT for gating and 1 TFT for power supply, but due to the lack of consistency in TFT production , requires complex compensation design. Usually, each pixel needs to use 4 to 7 TFTs, which leads to complex driving, larger pixel size, and limited electron mobility of TFTs, resulting in limited current supplied to the Micro-LED chip. Difficult to increase brightness

Method used

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  • High-brightness and high-reliability Micro-LED display device
  • High-brightness and high-reliability Micro-LED display device
  • High-brightness and high-reliability Micro-LED display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] refer to Figure 1 to Figure 3 , the Micro-LED display device of Embodiment 1 realizes display by several pixel units arranged in an array, and is provided with a Micro-LED chip 800, a first transistor 900, a TFT backplane 700 and a double-layer wiring carrier substrate 600; double-layer wiring The carrier substrate 600 and the TFT backplane 700 are arranged up and down, and each pixel unit has a discrete Micro-LED chip 800 and a first transistor 900 , and the Micro-LED chip 800 and the first transistor 900 are arranged on the double-layer wiring carrier substrate 600 . A TFT unit 701 is provided corresponding to each pixel unit on the upper surface of the TFT backplane 700 .

[0036] The Micro-LED chip 800 is provided with a surface light emitting layer 1 , a first semiconductor layer 2 , a multiple quantum well layer 3 , a second semiconductor layer 4 , an insulating layer 5 , a first electrode 6 , and a second electrode 7 . The surface light extraction layer 1 is an e...

Embodiment 2

[0049] refer to figure 2 , in this embodiment, the first transistor is a HEMT transistor, and is provided with a transistor substrate 11 , a GaN layer 12 , an AlGaN layer 13 , an AlN spacer layer 14 , and an AlGaN barrier layer 15 . Among the Al and Ga elements in the AlGaN layer 13 , the Al content is 15%, and the Ga content is 85%; the Al content in the AlGaN barrier layer 14 is 30%, and the Ga content is 70%.

[0050] All the other are identical with embodiment 1.

Embodiment 3

[0052] refer to Figure 5 , in this embodiment, the pixel unit 100 , the pixel unit 200 and the pixel unit 300 may be a blue light pixel unit, a green light pixel unit and a red light pixel unit, respectively. In the pixel array of the display device, the outer sidewall of each first transistor 900 covers the light-shielding encapsulation matrix 37, thereby shielding the first transistor 900 from light, and preventing the photons emitted by the Micro-LED chip 800 from irradiating the first transistor 900 to generate light. Carriers avoid dark current and improve reliability.

[0053] All the other are the same as the first embodiment.

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Abstract

The invention discloses a high-brightness and high-reliability Micro-LED display device which comprises a double-layer wiring bearing substrate and a TFT backboard arranged up and down. Each pixel unit is provided with a Micro-LED chip and a first transistor which are separated from each other, and the Micro-LED chips and the first transistors are arranged on the double-layer wiring bearing substrate; the upper surface of the TFT backboard is provided with TFT units corresponding to each pixel unit; the double-layer wiring bearing substrate is provided with a conductive via hole corresponding to each pixel unit, and each TFT unit is electrically connected with the first transistor of the corresponding pixel unit through the conductive via hole; the TFT units are used for gating the corresponding pixel units, the first transistors are used for supplying power to the corresponding pixel units, heat dissipation can be enhanced, leakage current can be reduced, current compensation can be achieved, and then Micro-LED display with high brightness, high efficiency and high reliability can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a high-brightness and high-reliability Micro-LED display device. Background technique [0002] LED has significant advantages such as energy saving, small size, long life, rich colors and reliable performance. In recent years, various types of Micro-LED displays have received widespread attention and have become an internationally recognized next-generation display technology. Micro-LED display arranges Micro-LED chips one by one tightly into an array, and each Micro-LED chip is independently driven to light up and emit light to achieve excellent display effect, which can realize flexible, transparent and high-resolution display. And its power consumption is only about 10% of the LCD panel. [0003] Each Micro-LED chip is driven to light up independently, and it needs to rely on the active driving backplane to configure individual control components for each Micro...

Claims

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Application Information

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IPC IPC(8): H01L27/15
CPCH01L27/156
Inventor 郭伟杰郑曦童长栋高玉琳郑振耀吕毅军陈忠
Owner XIAMEN UNIV