Gallium nitride power device with low saturation current characteristic
A technology of saturation current and power devices, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problem of large saturation current of gallium nitride power devices, etc., and achieve the effect of improving short-circuit resistance
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[0021] The present invention will be described in detail below with reference to the drawings:
[0022] The gallium nitride power device having a low saturation current characteristic of the present invention includes: a gallium nitride buffer layer 2 above the p-type silicon substrate 1, and the gallium nitride buffer layer 2 is provided above the p-type silicon substrate 1. There is a metal gallium nitrogen barrier layer 3, and the aluminum gallium nitrogen barrier layer 3 is provided as a source 6 and a drain 7 as the source 6 and the drain, respectively, and the input \ output of both ends of the aluminum gallium barrier layer 3 to the periphery. The source 6 metal forms ohmic contact with the left end of the aluminum gallium nitrogen barrier layer 3, the drain 7 metal and the aluminum gallium nitrogen barrier layer 3 form ohmic contact, and the aluminum gallium nitrogen barrier layer 3 is provided with a p-type gallium nitride layer. 9. Plant the p-type gallium nitride layer ...
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