Gallium nitride power device with low saturation current characteristic

Abstract

The invention relates to a gallium nitride power device with a low saturation current characteristic. The device is characterized in that a gallium nitride buffer layer, an aluminum-gallium-nitrogen barrier layer, a source electrode and a drain electrode are arranged above a P-type silicon substrate and are used as input and output for connecting two ends of the aluminum-gallium-nitrogen barrier layer to the periphery, and the source electrode and the left end of the aluminum-gallium-nitrogen barrier layer form ohmic contact; the drain electrode metal and the right end of the aluminum-gallium-nitrogen barrier layer form ohmic contact, a P-type gallium nitride layer is arranged above the aluminum-gallium-nitrogen barrier layer, gate electrode metal is arranged above the P-type gallium nitride layer to connect the aluminum-gallium-nitrogen barrier layer to input and output at the periphery of the structure, and the gate electrode metal and the P-type gallium nitride layer form Schottky contact; and the P-type gallium nitride layer and the grid electrode are close to the source electrode and far away from the drain electrode between the source electrode and the drain electrode, and a nitride passivation layer is arranged between the drain electrode above the aluminum gallium nitrogen barrier layer and the P-type gallium nitride. The structure of the gallium nitride power device can effectively reduce saturation current of the gallium nitride power device, and safety and reliability of the whole device structure are improved.

Description

technical field [0001] The invention mainly relates to the technical field of power integrated circuits, specifically, it is especially suitable for many power control and processing fields such as switching power supplies, motor control, automotive electronic systems, and household appliances. Background technique [0002] Today's semiconductor industry has increasing requirements for power devices, mainly including high power density, low on-resistance, high reliability, high frequency, small size and strong radiation resistance. However, the performance of silicon-based power devices, mainly metal-oxide-semiconductor field-effect transistors and insulated-gate bipolar transistors, has approached the theoretical limit of their materials and cannot meet the higher requirements for power devices in the next generation of power electronic systems. The "silicon limit" is critical. GaN material is one of the representatives of wide bandgap semiconductor materials. In the past ...

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Problems solved by technology

[0005] Aiming at the problem of large saturation current of GaN power devices, the present invention proposes a novel structure of GaN power devices, which effectively reduces the saturation current of GaN power devices, thereby improving the resistance of GaN power devices. Short-circuit capability, ultimately improving the practical performance of the entire device structure

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