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A silicon carbide dynamic and static test all-in-one machine

A silicon carbide, dynamic and static technology, applied in the direction of single semiconductor device testing, measuring electricity, measuring devices, etc., can solve the problems of continuous testing of samples, relative displacement, low efficiency, etc., and achieve high test authenticity and accuracy Effect

Active Publication Date: 2022-03-01
陕西开尔文测控技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to improve the performance of silicon carbide devices, scientific researchers have carried out various researches. Some transistor testers have been developed in the prior art, such as the transistor scanning test system disclosed in CN203838298U and a silicon carbide dynamic test disclosed in CN113253087A Equipment, Chinese patent CN203838298U includes a tester for testing transistors or diodes, and also includes a relay group and a relay control unit, which can realize automatic testing and improve testing efficiency, but samples cannot be tested continuously, and the efficiency is low
Chinese patent CN113253087A discloses equipment that can continuously replace test samples, which can meet the testing requirements of a large number of samples to be tested, but the eccentric wheel, transmission wheel, conveyor belt and other components used in this patent can only meet the continuous transmission of semiconductor samples, and semiconductor samples and Automatic connection of test equipment, each time a semiconductor sample is tested, the position of the eccentric wheel, transmission wheel, and conveyor belt does not change, and the position between the conductive metal column and the sample is relatively fixed, which is a static position test process for the semiconductor sample itself
However, in the actual application process of the semiconductor, it may vibrate with the movement of the load semiconductor device, and there is a relative displacement between the semiconductor sample and the wire. In the process, it is necessary to consider the relative displacement between the wire and the semiconductor sample, so it is necessary to develop an integrated dynamic and static test equipment

Method used

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  • A silicon carbide dynamic and static test all-in-one machine
  • A silicon carbide dynamic and static test all-in-one machine
  • A silicon carbide dynamic and static test all-in-one machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A silicon carbide dynamic and static test integrated machine, including a test equipment body 1, the test equipment body 1 is used to generate different currents, voltages, pulse signals, etc., for testing the electrical performance of a silicon carbide device 11, for example, the test equipment body 1 The KEW6400 power device dynamic and static test integrated machine of Shaanxi Kelvin Measurement and Control Technology Co., Ltd. can be used, and the SiC test power device PSG-06 can also be tested by using the bronze sword pulse signal generator IGBT. The main body 1 of the test equipment has wiring ports. By connecting different interface ports of the silicon carbide device 11 to different wiring ports of the test equipment, the pulse signals generated by the test equipment are transmitted to the test silicon carbide device 11, and then the test equipment performs the test according to the test situation. Reflect test results. The present invention develops a sampling...

Embodiment 2

[0056] A silicon carbide dynamic and static test integrated machine, basically the same structure as the embodiment 1, the difference is:

[0057] see Figure 9 , the conveyor belt 53 is provided with a plurality of grooves 531 sunken toward its interior, that is, grooves 531 sunken toward the direction of the transmission wheel 51, the size of the grooves 531 is slightly larger than the size of the silicon carbide device 11, and is located Directly below, the silicon carbide device 11 is placed in the groove 531 , and the groove 531 containing the silicon carbide device 11 to be tested is transferred directly below the conductive metal pillar 22 at intervals T1. When the conveyor belt 53 is conveyed, the groove 531 is connected with the side wall of the transmission wheel 51 by an elastic member, and the groove 531 can be compressed after meeting the transmission wheel 51, and after leaving the transmission wheel 51, the groove 531 can automatically expand. Preferably, the e...

Embodiment 3

[0060] A silicon carbide dynamic and static testing all-in-one machine, the structure of which is basically the same as that of Embodiment 2, the difference is that

[0061] The upright column 2 is T-shaped, inverted L-shaped, I-shaped or square, and the movable column 21 is connected to the top of the upright column 2 in a hinged manner. At this time, the movable column 21 is directly rotatably connected to the top of the column 2 , and the horizontal frame 23 does not need to be provided. This embodiment simplifies the device structure.

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Abstract

The invention belongs to the technical field of semiconductor testing equipment, and specifically relates to a silicon carbide dynamic and static testing integrated machine, which includes a main body of testing equipment and a sampling device. The sampling device includes a column, and the top of the column is rotatably connected to a movable column. The movable column is laid with a wire, and the end of the wire connected to the interface end of the silicon carbide device is connected to a conductive metal column, and the conductive metal column is fixed at the bottom of the movable column; a fixing frame is provided on the side of the column, and the A sample storage box, a sample delivery device, a height adjustment device, a sample recovery box and a controller are installed on the fixed frame. The present invention has developed a continuous test sample feeding device suitable for dynamic and static combination tests that can be used in conjunction with silicon carbide testing equipment. It can not only test the continuity of all silicon carbide devices to be tested, but also simulate the performance of silicon carbide devices. The position change of the static use process and the dynamic use process is more accurate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor testing equipment, and in particular relates to a silicon carbide dynamic and static testing integrated machine. Background technique [0002] Semiconductor devices such as IGBT, silicon carbide, etc. are used in many devices. The most common silicon carbide semiconductor device is a transistor. Silicon carbide transistors have high blocking voltage, reduced conduction voltage, short turn-off time and high temperature resistance. It has a very large advantage in the application of power electronic devices. In silicon carbide, SiC BJT has more unique advantages, such as close turn-off time to SiC MOSFET, and does not require complicated gate oxide process. Although SiC BJT has unique advantages, as a flow-controlled device, it needs a continuous base current supply when the device is working, which requires the stable performance of all functions of the device. [0003] In order to improve ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2648G01R31/2601
Inventor 杜浩晨
Owner 陕西开尔文测控技术有限公司