Dual-mode GCT with n + adjustment region and preparation method thereof
An adjustment area and dual-mode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, thyristors, etc., can solve the problems of increased static power consumption and difficulty in achieving accurate control of the process, so as to suppress the peak electric field and reduce the anode holes Injection efficiency, effect of improving reverse recovery speed and softness
Pending Publication Date: 2021-12-17
XIAN UNIV OF TECH
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[0004] The object of the present invention is to provide a + The dual-mode GCT in the adjustment area solves the problem that it is difficult to achieve accurate control in the process of the existing technology, and at the same time the problem of increased static power consumption
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[0039] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0040] Figure 1a It is a schematic diagram of the basic cross-sectional structure of the existing BGCT; Figure 1b It is a schematic diagram of the distribution of the existing BGCT gate unit and cathode unit. Depend on Figure 1a It can be seen that there are (1.5) GCT units on both sides of each PIN unit in the BGCT. Whether the GCT is turned on when the BGCT is working in the forward direction, or the PIN diode is turned on when the BGCT is working in the reverse direction, the two will effectively use the other area to conduct current. Therefore, the problem of local concentration of current caused by the relative concentration of the GCT unit and the PIN unit in the conventional RC-GCT is solved. In addition, a pnp isolation region is used between the GCT unit and the PIN unit. No matter whether the voltage between G and K is positive or...
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Abstract
The invention discloses a dual-mode GCT with an n + adjustment region. The dual-mode GCTis characterized in that all GCT units and PIN diode units on the surface of the whole device are uniformly distributed on the upper surface of a chip in a concentric ring manner in a finger strip shape, the GCT units and the PIN diode units are distributed in a crossed manner according to the proportion of 3:1, the middle position of the upper surface of the p anode region of each PIN diode unit is provided with a strip-shaped or a plurality of circular n + adjustment regions, and the p anode region and p base regions of the adjacent GCT units on the two sides are effectively isolated through pnp isolation regions. The invention also discloses a preparation method of the dual-mode GCT with the n + adjustment region. According to the BGCT, the transverse local carrier lifetime control process for the PIN diode is omitted, the process difficulty and cost are reduced, the recovery speed and the softness of the PIN diode can be effectively improved, the dynamic avalanche is inhibited, and the reversing reliability of the device is ensured.
Description
technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a + The dual-mode GCT of the adjustment region, the present invention also relates to the kind having n + Preparation method of dual-mode GCT of the adjustment region. Background technique [0002] Reverse conduction gate commutated thyristor (RC-GCT) is a new type of power semiconductor device, which integrates GCT and PIN diode for freewheeling in anti-parallel on a silicon chip to reduce device volume and improve system reliability. It has broad application prospects in the field of high power. In order to obtain lower switching power consumption and commutation reliability of the RC-GCT, it is necessary to reduce the reverse recovery peak current and reverse recovery time of the PIN diode, and increase its softness. In the traditional RC-GCT structure, due to the relatively concentrated distribution of GCT cells, whether the PIN diode is placed in the cen...
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IPC IPC(8): H01L29/74H01L29/06H01L21/332
CPCH01L29/7416H01L29/0619H01L29/66371
Inventor 王彩琳杨武华罗琳张如亮张超
Owner XIAN UNIV OF TECH