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Fast recovery diode and fabrication method thereof

A technology for recovering diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor dynamic avalanche resistance, achieve improved dynamic avalanche resistance, strong operability, and avoid contamination effect of the problem

Pending Publication Date: 2019-04-02
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the above-mentioned deficiencies in the prior art that the metal on the back of the fast recovery diode has a risk of falling off and its ability to resist dynamic avalanche is poor, the present invention provides a fast recovery diode and a manufacturing method thereof. The fast recovery diode includes an N-type silicon chip and a The front and back structures of the front and back of the N-type silicon wafer: the back structure includes an N-type doped layer, an N-type buffer layer, an N-type phosphorus-doped region and a back metal, an N-type buffer layer, an N-type phosphorus-doped region and a back metal It is arranged on the back of the N-type silicon wafer in sequence from the inside of the N-type silicon wafer to the back, and the N-type doped layer is arranged inside the N-type silicon wafer; in the manufacturing method, the front structure is formed first, and then the back structure is formed. , in the process of forming the back structure, the N-type buffer layer and the N-type doped layer are formed first, and then the back metal is formed, which avoids the risk of contamination on the back surface of the silicon wafer, thereby avoiding the risk of falling off the metal on the back of the fast recovery diode. And greatly improved the anti-dynamic avalanche ability of the fast recovery diode

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  • Fast recovery diode and fabrication method thereof
  • Fast recovery diode and fabrication method thereof
  • Fast recovery diode and fabrication method thereof

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Embodiment 1

[0068] Embodiment 1 of the present invention provides a manufacturing method of the fast recovery diode provided in Embodiment 1. The schematic diagram of the longitudinal doping distribution of the fast recovery diode and the longitudinal electric field distribution of the fast recovery diode when reverse biased are respectively as follows figure 2 and image 3 As shown, the specific flow chart of Embodiment 1 of the present invention is as follows figure 1 As shown, the specific process is as follows:

[0069] S101: sequentially forming an active region 21, a protection ring 22 and an oxide layer 3 on the front surface of the N-type silicon wafer 1;

[0070] S102: After the oxide layer 3 is formed, an N-type stop ring 41 is formed on the front side, and an N-type phosphorus-doped region 42 is formed inside the back side of the N-type silicon wafer;

[0071] S103: After the N-type stop ring 41 is formed, sequentially form a BPSG layer 5, a front metal layer and a passivati...

Embodiment 2

[0097] Embodiment 2 of the present invention provides a fast recovery diode, which includes an N-type silicon chip and a front structure and a back structure respectively located on the front and back of the N-type silicon chip:

[0098] The back structure includes an N-type doped layer, an N-type buffer layer, an N-type phosphorus-doped region and a back metal, and the N-type buffer layer, the N-type phosphorus-doped region and the back metal are arranged in order from the inside of the N-type silicon wafer to the back. On the back of the N-type silicon wafer, the N-type doped layer is disposed inside the N-type silicon wafer.

[0099] The front structure includes active area, guard ring, N-type stop ring, oxide layer, BPSG layer (ie boro-phospho-silicate-glass), front metal and passivation layer;

[0100] Front metal includes active area metal and stop ring metal.

[0101] The active area, the guard ring and the N-type stop ring are all arranged inside the N-type silicon wa...

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Abstract

The invention provides a fast recovery diode and a fabrication method thereof. The fast recovery diode comprises an N-type silicon wafer, a front-surface structure and a back-surface structure, wherein the back-surface structure comprises an N-type doping layer, an N-type buffer layer, an N-type phosphor-doping region and back-surface metal, the N-type buffer layer, the N-type phosphor-doping region and the back-surface metal are sequentially arranged on a back surface of the N-type silicon wafer, and the N-type doping layer is arranged in the N-type silicon wafer. The front-surface structureis formed and then the back-surface structure is formed, during the formation process of the back-surface structure, the N-type buffer layer and the N-type doping layer are formed, and then the back-surface metal is formed; the N-type buffer layer process is performed after formation of the front-surface structure, the back-surface cleanness of a chip can be completely improved by a thinning process, the problem of pollution on a back surface of the silicon wafer is prevented, and the risk that back gold falls off is fundamentally prevented; and meanwhile, the N-type doping layer exists in thesilicon wafer, and the dynamic avalanche-resistant capability of the fast recovery diode is substantially improved. The fabrication method provided by the invention is simple in process and high in operability.

Description

technical field [0001] The invention relates to the technical field of power electronic devices, in particular to a fast recovery diode and a manufacturing method thereof. Background technique [0002] In recent years, flexible power transmission equipment based on high-voltage and high-power insulated-gate bipolar transistor (IGBT) devices has been put into operation in the power grid system, which is important for the safe and stable operation of large power grids, large-scale new energy grid connection, and long-distance power transmission. etc. have played a significant role in demonstration. [0003] Generally, IGBT needs a fast recovery diode (FRD) connected in parallel with it when it is used. With the continuous development of power electronics technology, the switching frequency and performance requirements of various main switching devices continue to increase. Undoubtedly, the fast recovery diode The performance puts forward higher requirements. In order to impro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L21/265H01L29/06H01L29/861
CPCH01L29/861H01L21/26513H01L29/0623H01L29/6609
Inventor 曹功勋朱涛田亮吴昊金锐吴军民潘艳
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD