IGBT device with improved field intensity uniformity of active area and terminal connection area and manufacturing method thereof
A technology of terminal connection and active area, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of slow IGBT switching speed, reduce IGBT reliability, reduce transmission speed, etc., and reduce switching speed. Losses, Enhanced Reliability, Increased Switching Speed Effects
Active Publication Date: 2016-04-20
STATE GRID CORP OF CHINA +2
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Problems solved by technology
[0004] The connection between the emitter aluminum lead area 01 and the first metal field plate 05 of the terminal protection ring in the prior art is connected by the aluminum line 10. This aluminum line connection method leads to the active area 08 in the aluminum line area and the terminal 07 The field strength in the connection area is too large, and the field strength of the IGBT active area 08 and the connection area of the terminal 07 are inconsistent, and dynamic avalanche is prone to occur in the area where the field strength is too large, thereby reducing the reliability of the IGBT, and the aluminum lead 03 in the gate aluminum lead area is covered by aluminum The connection 10 is split, and the transmission speed of the IGBT gate voltage is reduced, resulting in a slower switching speed of the IGBT
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[0040] The specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0041] The technical terms are explained in detail below:
[0042] Aluminum lead area: the window opened on the passivation layer of the chip, and the metal wire is welded on it during packaging and connected to the pin to draw the potential. Specifically, there are a gate aluminum lead area and an emitter aluminum lead area.
[0043] Gate aluminum lead area: In order to ensure that the edge cells are turned on or off at the same time, the edge cells are usually surrounded by a metal ring, and then the gate potential is transmitted through polysilicon.
[0044] Active area: The area where silicon wafers are used as active devices. For IGBT devices, it mainly refers to the cell area.
[0045] Terminal P-type field limiting ring: It is a region doped with P-type impurities.
[0046] The invention provides an IGBT device that improves the unif...
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The invention relates to an IGBT (Insulated Gate Bipolar Transistor) device with improved field intensity uniformity of an active area and a terminal connection area and a manufacturing method thereof. The IGBT device includes an emitter aluminum lead area, a gate aluminum lead area, an active area, a terminal P-type field limiting ring, a field oxide layer, a gate Bus area and a terminal area. The gate aluminum lead area is in a corner position of the device. The emitter lead area is in the active area. The gate Bus area surrounds the active area. The terminal area is at the periphery of the gate Bus area. By improving the design of the traditional connection structure between an emitter and a first metal field plate and a first gate field plate, the field intensity uniformity of the active area and the terminal connection area of the IGBT device is improved, and thus, the overall field intensity uniformity of the IGBT device is better. The field intensity uniformity of the active area and the terminal connection area of the IGBT is improved, the integrity of an aluminum lead of the gate aluminum lead area is ensured, transmission of gate voltage is improved, and therefore, the switching speed of the IGBT is improved and the switching loss is reduced.
Description
Technical field [0001] The invention relates to an IGBT device and a manufacturing method thereof, in particular to an IGBT device and a manufacturing method for improving the uniformity of the field strength of the active area and the terminal connection area. Background technique [0002] IGBT (InsulatedGateBipolarTransistor) insulated gate bipolar transistor is a new type of composite power device developed on the basis of MOSFET (Metal Oxide Field Effect Transistor) and GTR (Power Transistor). It not only has MOSFET easy to drive, low control power, The driving circuit is simple, the switching speed is high, and the switching loss is small. It also has the advantages of low on-voltage, large on-state current, and strong current handling capability of the bipolar transistor. It is widely used in induction cooker, automotive electronics, frequency converter, power system, electric welding machine, switching power supply and other circuits, and it puts forward very high requirem...
Claims
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IPC IPC(8): H01L29/739H01L29/08H01L21/335
Inventor 何敏赵哿金锐刘江王耀华高明超
Owner STATE GRID CORP OF CHINA