Tunneling magnetoresistance sensor and preparation method and use method thereof

Abstract

The invention relates to the field of magnetic sensors, and provides a tunneling magnetoresistance sensor and a preparation method and a use method thereof. The tunneling magnetoresistance sensor sequentially comprises a lower electrode, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a tunneling insulating layer, a ferromagnetic free layer and an upper electrode from bottom to top, and further comprises an oxide layer arranged between the upper electrode and the ferromagnetic free layer; under the condition that voltage with controllable intensity is applied to the oxide layer, oxygen ions in the oxide layer migrate to the interface of the oxide layer and the ferromagnetic free layer under the action of an electric field, and the magnetic anisotropy of the ferromagnetic free layer is changed, so that the tunnel junction dynamic range of the tunneling magnetoresistance sensor is changed. The adjustable electric field is used for driving the oxygen ions in the oxide layer to move, so that the magnetic anisotropy of the ferromagnetic free layer is changed, the dynamic range of the tunneling magnetoresistance sensor is adjusted and controlled, and the requirements in different application environments can be met.

Description

technical field [0001] The invention relates to the field of magnetic sensors, in particular to a tunneling magnetoresistance sensor, a preparation method of the tunneling magnetoresistance sensor and a use method of the tunneling magnetoresistance sensor. Background technique [0002] Magnetic sensors can sense changes in physical quantities related to magnetic phenomena and convert them into electrical signals for detection, thereby directly or indirectly detecting physical information such as magnetic field size, direction, displacement, angle, and current. Magnetoresistance (MR) sensors have the advantages of low offset, high sensitivity and good temperature performance, and are widely used in information, motors, power electronics, energy management, automobiles, magnetic information reading and writing, industrial automatic control and biomedicine, etc. field. The magnetoresistance sensor includes AMR (Anisotropy Magnetoresistance, anisotropic magnetoresistance) senso...

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Problems solved by technology

[0003] Since the magnetoresistance effect of the tunneling magnetoresistive sensor is related to the magnetization direction of the magnetic material and the magnetic anisotropy field, its sensitivity and linear measurement range are limited by the size of the free layer magnetic anisotropy field. Resistive sensors can only provide a linear response range of about 100 Oersted (Oe), which is difficult to meet actual needs

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