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Device and method for controlling Van der Waals epitaxy and remote epitaxy growth modes

A Van der Waals and epitaxial growth technology, which is applied in the field of low-dimensional thin film single crystal semiconductor epitaxial growth, can solve the problems of process cost and time cost increase, and achieve the effects of fast peeling speed, good heat dissipation, and saving production cost

Pending Publication Date: 2021-12-31
NANTONG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In traditional technology, if it is necessary to switch between van der Waals epitaxy and remote epitaxy, it is necessary to change the thickness of the graphene layer on the GaN substrate, that is to say, it is necessary to make different substrates, thin film materials Process cost and time cost will increase sharply

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  • Device and method for controlling Van der Waals epitaxy and remote epitaxy growth modes
  • Device and method for controlling Van der Waals epitaxy and remote epitaxy growth modes
  • Device and method for controlling Van der Waals epitaxy and remote epitaxy growth modes

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Embodiment 1

[0032] See figure 1 , the device for controlling van der Waals epitaxy and remote epitaxy growth modes of this embodiment, comprising a free-standing gallium nitride (GaN) substrate 1, a single-layer graphene layer 2, a gate 3, a source 4, and a drain 5.

[0033] The single-layer graphene layer 2 is on the self-supporting GaN substrate 1 to form a GaN-graphene substrate.

[0034] The source 4 and the drain 5 are respectively placed on both sides of the single-layer graphene layer 2 , and the gate 3 is placed on the bottom layer of the GaN substrate 1 . A gate bias voltage 6 is applied between the gate 3 and the source 4 , and a source-drain voltage 7 is applied between the source 4 and the drain 5 . The source 4 and the drain 5 should be as far away from the center of the GaN substrate 1 as possible, because the growth temperature at the center is relatively high. Even if it is far away, it is necessary to take protective measures for the 4 and 5 power supplies to prevent fai...

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Abstract

The invention discloses a device and a method for controlling Van der Waals epitaxy and remote epitaxy growth modes, which utilize a gallium nitride-graphene substrate to control the selection of the epitaxy growth mode by changing a grid bias voltage applied to a graphene layer. If forward bias voltage is applied to the graphene layer grid electrode, the main carrier type in the graphene is electrons, the polarity of gallium nitride is inhibited, the epitaxy growth mode selects traditional Van der Waals epitaxy, and only a thin film except a two-dimensional Van der Waals gallium nitride single crystal can grow on the graphene. On the contrary, if the external voltage or the reverse bias voltage is not applied to the graphene layer grid electrode, remote epitaxy is selected, and the two-dimensional Van der Waals gallium nitride single crystal thin film grows on the graphene. The problem that the substrate needs to be manufactured for multiple times in the production process due to different graphene thicknesses required by two epitaxial modes is avoided. Not only can the high-quality gallium nitride material be produced, but also the time and the manufacturing cost are obviously saved.

Description

technical field [0001] The invention relates to the technical field of low-dimensional thin film single crystal semiconductor epitaxial growth, in particular to a device and method for controlling van der Waals epitaxy and remote epitaxy growth modes. Background technique [0002] In recent years, semiconductors have penetrated into every aspect of our lives. Compared with the first and second-generation semiconductor materials, the third-generation wide-bandgap semiconductor material gallium nitride (GaN) has the characteristics of high saturation electron drift velocity, high thermal conductivity, and high critical breakdown voltage. It is the material of choice for high-power devices in extreme environments due to its superior properties such as high pressure and high temperature resistance. It can better meet the needs of 5G technology, new energy vehicles, and military detection. At the same time, it has broad market prospects in the fields of high-end optoelectronics ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/772H01L29/16H01L21/335
CPCH01L29/1606H01L29/66431H01L29/772
Inventor 余晨辉秦嘉怡沈倪明陈红富陆炎成田恬罗曼
Owner NANTONG UNIVERSITY