Ultraviolet LED and detector homogeneous integrated chip and preparation method thereof

Abstract

The invention provides an ultraviolet LED and detector homogeneous integrated chip and a preparation method thereof, and the homogeneous integrated chip comprises a substrate; a buffer layer; an LED device which is in a circular ring shape or a circular arc shape; and a detector positioned on the inner side of the LED device. According to the integrated chip, the circular-ring-shaped or circular-arc-shaped LED device and the detector located on the inner side of the LED device are adopted, the utilization rate of light emitted by the LED is increased in the direction, the interaction area of the LED and the side wall of the detector is increased under the condition that the area of an active area is fixed, and collection of the detector is facilitated. According to the integrated chip, a metal reflecting layer is arranged on the peripheral surface of the LED device, so that the light extraction efficiency and the electro-optical conversion efficiency of the LED device in the homogeneous integrated chip are greatly improved, the incident luminous flux received by a detector is increased, the sensitivity is improved, and the light dissipation of the integrated chip is effectively reduced. Therefore, the purpose of improving the signal conversion efficiency and the transmission speed of the homogeneous integrated chip of the ultraviolet LED and the detector is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor technology and communication, in particular to a homogeneous integrated chip of an ultraviolet LED and a detector and a preparation method thereof. Background technique [0002] Because ultraviolet light has the advantages of short wavelength, high frequency, fast transmission speed, and no interference from visible light, it is easy to conceal and has good confidentiality. It has great application value in the fields of guidance, atmospheric environment monitoring, deep space exploration and ultraviolet navigation. AlGaN is a direct bandgap semiconductor, its bandgap width is continuously adjustable between 3.4-6.2eV with the change of Al composition, the corresponding wavelength is 365nm-200nm, covering most of the ultraviolet band, and has stable physical and chemical properties. It can work under the conditions of high frequency, high voltage and high power, and is a high-quality material for pre...

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Problems solved by technology

[0003] However, previous research on homogenous integrated chips of LEDs and detectors found that due to the uncertainty of the light output direction of the light source, only a very small part of the light propagating through the air can be detected by PDs. The traditional solution is to use optical waveguides to limit the optical path. Auxiliary light transmission, but because the waveguide device generally only has a single directionality, and the optical coupling efficiency between the light source and the detector is low, the loss of the optical signal is still serious, resulting in weak collection ability on the detector side and low response efficiency. Ultimately affect the transmission rate, bandwidth and power consumption of the integrated chip

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