Growth device and method for rapidly growing low-dislocation gallium arsenide single crystal by combining VB method and VGF method

Abstract

The invention discloses a growth device for rapidly growing a low-dislocation gallium arsenide single crystal by combining a VB method and a VGF method. The growth device consists of a furnace body, a graphite base, a PBN crucible and a lifting device, wherein the furnace body comprises six heating areas and six temperature control devices for controlling the temperature of the heating areas, and the six heating areas are a first area, a second area, a third area, a fourth area, a fifth area and a sixth area in sequence from bottom to top; the graphite base is arranged on the ground through the supporting base; the PBN crucible is arranged in the quartz ampoule, and the quartz ampoule is arranged on the graphite base; the lifting device is connected with the furnace body and can pull the furnace body to be lifted at a certain pulling speed; and a quartz cover is arranged between the furnace body and the PBN crucible and connected with the supporting base. The ultra-low dislocation crystal can be grown, the shouldering time is shortened by 20%, the equal-diameter growth time is shortened by 50%, and the growth efficiency is greatly improved.

Description

technical field [0001] The patented technology belongs to the field of compound semiconductor crystal growth, in particular a growth device and method for rapidly growing a low-dislocation gallium arsenide single crystal by combining the VB method and the VGF method. Background technique [0002] With the rapid development of artificial intelligence, 5G communication and outer space, gallium arsenide materials are playing an increasingly important role, especially infrared / infrared optoelectronic devices, solar devices and microwave devices. With the improvement of gallium arsenide IC integration and the need to reduce costs, the general development trend of gallium arsenide tends to be large diameter, long size, uniformity and consistency of electrical parameters, so the requirements for product batch consistency are more stringent strict. The current problem in the industry is that the crystal length is generally less than 150mm. Once the crystal length is longer, the dis...

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Problems solved by technology

The current problem in the industry is that the crystal length is generally less than 150mm. Once the crystal length is longer, the dislocation density will increase significantly, and the edge dislocations will be densely dense.

At the same time, the proportion of double crystal affecting the yield is relatively large, affecting the pass rate

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