Rectifier diode high-frequency circuit modeling method based on differential evolution algorithm

Abstract

The invention discloses a rectifier diode high-frequency circuit modeling method based on a differential evolution algorithm. The method comprises the following steps: 1, establishing a rectifier diode high-frequency equivalent circuit model topology; 2, extracting corresponding parasitic impedance information of the rectifier diode through a vector network analyzer; 3, according to the equivalent circuit topology of the rectifier diode, obtaining the expression of the impedance Z of the rectifier diode; 4, performing optimal parameter problem conversion; 5, initializing parameters; 6, carrying out mutation operation; 7, performing crossover operation; 8, carrying out selection operation; 9, performing convergence discrimination operation; 10, obtaining an optimal resistance-inductance-capacitance RLC parameter value of the parasitic impedance equivalent circuit model; and finally, analyzing dynamic and static characteristics of the model to verify the effectiveness of the modeling method. According to the invention, the high-frequency circuit modeling of the rectifier diode is realized, and the high-frequency characteristic of the rectifier diode can be accurately represented.

Description

technical field [0001] The invention relates to the technical field of high-frequency modeling of non-ideal passive devices of switching power supplies, in particular to a method for modeling high-frequency circuits of rectifier diodes based on differential evolution algorithms. Background technique [0002] Rectifier diodes are high-frequency non-ideal devices commonly used in switching power supplies, and are often used for rectification, voltage stabilization and protection of switching power supplies. However, the electromagnetic interference characteristics of switching power supplies are closely related to the high-frequency characteristics of their non-ideal devices. In order to improve the accuracy of EMI estimation of switching power supplies, it is necessary to conduct modeling research on the high-frequency characteristics of their related non-ideal devices. The traditional research on EMI estimation of switching power supplies has not fully considered the impact ...

AI Technical Summary

Problems solved by technology

The traditional research on EMI estimation of switching power supplies has not fully considered the impact of non-ideal device high-frequency characteristics on its EMI characteristics. In many cases, due to the relatively simple topology of the estimated object and the low estimated frequency band, only the ideal model of the device is used. Or the parameters on the device data sheet for related estimation work, due to the lack of high-frequency characteristics of the device and the difference between the ideal model and the actual situation, the estimation accuracy is difficult to improve

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