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Method of fabricating silicon carbide material

A silicon carbide, wafer technology, applied in the direction of silicon carbide, chemical instruments and methods, carbides, etc., can solve the problems of crystal or wafer quality deterioration, cracking and other problems, to improve the resistivity, atomic arrangement, avoid quality deterioration or cracking Effect

Pending Publication Date: 2022-01-28
GLOBALWAFERS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when annealing is performed at a temperature above 2000°C, it is easy to deteriorate the quality of the crystal or wafer or cause it to crack

Method used

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  • Method of fabricating silicon carbide material
  • Method of fabricating silicon carbide material
  • Method of fabricating silicon carbide material

Examples

Experimental program
Comparison scheme
Effect test

experiment example A

[0051] In the following experimental examples, the annealing process of the present invention is performed on wafers formed after dicing, and the average resistivity is judged. Wherein, the annealing temperature is controlled at 1950°C, the constant temperature annealing time is 30 minutes, and the heating rate is adjusted in the range of 10°C / min to 30°C / min. By adjusting the heating rate, the average resistivity of the wafer is shown in Table 1.

[0052] Table 1

[0053]

[0054] From the experimental examples in the above table 1, it can be confirmed that when using the annealing process of the present invention to prepare a silicon carbide wafer, the average resistivity of the wafer can be effectively controlled to be greater than 10 10 The range of Ω·cm. As shown in Experimental Example A1, when the heating rate is adjusted within the range of 10°C / min to 20°C / min, the average resistivity of the silicon carbide wafer is greater than 10 10 The portion of Ω·cm may occ...

experiment example B

[0056] In order to further confirm the correlation between the annealing temperature and the resistivity and quality of the wafer / crystal, in this experimental example, the crystal is subjected to the annealing process of the present invention. Wherein, the constant temperature annealing time is 30 minutes, the heating rate is 10°C / min, and the annealing temperature is controlled at 1950°C, 2000°C or 2050°C. The experimental results are shown in Table 2.

[0057] Table 2

[0058]

[0059] From the experimental results in Table 2, it can be known that when the annealing temperature (experimental example B2, B3) of the present invention is used to carry out the annealing process, the crystal can achieve better (10 10 Ω·cm or more) resistivity, and at the same time avoid the problem of crystal damage. As shown in the experimental example B2 of Table 2, when the annealing temperature was controlled at 1950°C, the crystal was not damaged, and the resistivity was good (10 10 Ω...

experiment example C

[0062] In order to further confirm the correlation between the heating rate and the resistivity of the wafer / crystal, in this experimental example, the annealing process of the present invention is performed on the wafer. Wherein, the annealing temperature is controlled at 1950°C, the constant temperature annealing time is 30 minutes, and the heating rate is adjusted within the range of 10°C / min to 40°C / min. The experimental results are shown in Table 3.

[0063] table 3

[0064] Experimental example C1 Experimental example C2 Experimental example C3 Experimental example C4 Heating rate 10℃ / min 20℃ / min 30℃ / min 40℃ / min Resistivity it is good it is good it is good Difference

[0065] From the experimental results of Table 3, it can be known that when using the heating rate of the present invention (experimental example C1~C3) to carry out the annealing process, the wafer can achieve better (10 10 Ω·cm or more) resistivity. In co...

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Abstract

The invention provides a method of fabricating a silicon carbide material. The method includes the following steps. A first annealing process is performed on a wafer or on a crystal. The conditions of the first annealing process include: a heating rate of 10 DEG C / minute to 30 DEG C / minute, an annealing temperature of 2000 DEG C or less, and a constant temperature annealing time of 2 minutes or more and 4 hours or less for performing the first annealing process. After performing the first annealing process, an average resistivity of the wafer or the crystal is greater than 1010 [omega].cm.

Description

technical field [0001] The invention relates to a method for preparing a silicon carbide material, in particular to a method for preparing a silicon carbide material with high resistivity characteristics. Background technique [0002] Generally speaking, if high-purity crystals want to produce high resistance values, it is necessary to generate point defects in an environment at a high temperature of 2000°C to 2400°C, and rapid annealing at 30°C / min to 150°C / min, so as to produce high resistance. The electrical characteristics of the rate. However, when the annealing is performed at a temperature higher than 2000° C., the quality of the crystal or wafer is easily deteriorated or cracked. [0003] In view of this, how to increase the resistivity of the crystal / chip while avoiding the quality degradation or cracking of the crystal / chip is a problem to be solved at present. Contents of the invention [0004] The invention provides a method for preparing a silicon carbide ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324H01L21/04
CPCH01L21/324H01L21/0445C01B32/956C30B29/36C30B33/02H01L21/02005H01L21/322C23C14/5806C01P2006/40H01L29/1608C23C14/0635
Inventor 林钦山
Owner GLOBALWAFERS CO LTD