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A strained diamond growth doping method and epitaxial structure based on mbe method

A diamond and diamond thin film technology, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of n-type doping of diamond, large doping of diamond, and difficulty in forming a high doping rate, etc., to achieve an increase in doping efficiency effect

Active Publication Date: 2022-03-15
WUHAN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the problem of diamond n-type doping has not been well resolved.
The commonly used n-type doping is phosphorus doping, but the van der Waals radius of phosphorus atoms is larger than that of carbon atoms, and the formation energy of doped diamonds is relatively large, so it is difficult to form a high doping rate, which limits the electrical properties of n-type diamond doping

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  • A strained diamond growth doping method and epitaxial structure based on mbe method
  • A strained diamond growth doping method and epitaxial structure based on mbe method
  • A strained diamond growth doping method and epitaxial structure based on mbe method

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Embodiment Construction

[0029] Embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but should not be used to limit the scope of the present invention.

[0030] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

[0031] Such as figure 1 As shown, the present invention provides a strain-doped diamond epitaxial structure based on the MBE method, including the epitaxial growth of X on the substrate layer from top to bottom in the vertical direction by the MBE method. a C 1-a Gradient Buffer, X b C 1-b The relaxation layer and the MBE strain-doped diamond film layer, wherein the X element is a lattice constant adjustment element, and C is a carbon element; by adjusting the ratio of X to make X b C 1-b The lattice constant of the relaxed layer is larger than that of th...

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Abstract

The invention discloses a strained diamond growth doping method and an epitaxial structure based on the MBE method. A graded buffer layer and a relaxation layer are epitaxially grown on the substrate layer by the MBE method, and finally a strained diamond layer is epitaxially grown on the relaxation layer, and doped by the MBE method. During the growth and doping process of MBE strained diamond, the composition of the materials in the graded buffer layer and the relaxation layer can be controlled more accurately, and an atomically smooth surface can be obtained, so that the lattice constant of the relaxation layer material is larger than that of the diamond material. The lattice constant makes the diamond in a state of tensile strain, thereby improving the doping efficiency of diamond.

Description

technical field [0001] The invention belongs to the technical field of diamond semiconductors, and relates to a diamond doping technology, in particular to a strained diamond growth doping method based on an MBE method and an epitaxial structure. Background technique [0002] Diamond, also known as "diamond", exists in nature and appeared in human society 4,000 years ago. Because of its beautiful and hard appearance, it has become a symbol of wealth and nobility. The modern diamond era originated from the discovery of a large diamond mine in South Africa in 1866. Later, a company headed by British De Beers marketed high-end diamond jewelry to consumers around the world. However, due to its unique inherent physical properties such as high hardness, wide band gap, high thermal conductivity, and high electron mobility, diamond is suitable as a basic material in various electronic devices. However, the price of natural diamond is expensive, so it has little development in the s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/02C30B29/04C30B25/18
CPCC23C16/278C23C16/0272C30B29/04C30B25/183
Inventor 刘胜沈威吴改梁康郭宇铮汪启军王诗兆
Owner WUHAN UNIV
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