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Method for inhibiting production of ruthenium-containing gas from ruthenium-containing liquid

A gas and liquid technology, applied in the field of RuO4 gas, can solve problems such as harm to the human body

Pending Publication Date: 2022-02-01
TOKUYAMA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to RuO 4 It is highly oxidizing and therefore harmful to the human body

Method used

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  • Method for inhibiting production of ruthenium-containing gas from ruthenium-containing liquid
  • Method for inhibiting production of ruthenium-containing gas from ruthenium-containing liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0078] Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to these Examples.

[0079]

[0080](Preparation of ruthenium-containing liquid)

[0081] After adding 52 g of 39% sodium hypochlorite (manufactured by Junsei Chemical), 8 g of 97% tetramethylammonium bromide (manufactured by Tokyo Kasei), and 940 g of ultrapure water to a container made of fluororesin, the pH was adjusted to 12.0 using 4 wt % NaOH aqueous solution, Thus, a treatment liquid for Ru etching was obtained. At 25°C, a film with a film thickness A 300 mm Si wafer of ruthenium was immersed in 1 L of the obtained treatment liquid for 10 minutes, and the resulting ruthenium-containing liquid was recovered in a waste liquid tank.

[0082] (mixture of ruthenium-containing liquid and reducing agent)

[0083] 23 g of 95% sodium thiosulfate (manufactured by FUJIFILM Wako Pure Chemical Corporation) was taken in a container made of fluororesin, and dissolve...

Embodiment 2～10

[0087] According to the same procedure as in Example 1, a mixed solution of the ruthenium-containing liquid and the inhibitor was prepared so as to have the composition described in Table 1, and Ru analysis in the obtained mixed solution was performed. It should be noted that in Examples 5 and 6, since 30% hydrogen peroxide solution was used, no dilution with ultrapure water was performed. In addition, in Examples 7 and 8, a basic compound (25% tetramethylammonium hydroxide) was used as an inhibitor, and dilution with ultrapure water was not performed likewise.

Embodiment 11

[0089] According to the same procedure as in Example 1, a mixed solution of the ruthenium-containing liquid and the inhibitor was prepared so as to have the composition described in Table 1, and Ru analysis in the obtained mixed solution was performed. Wherein, for the reducing agent, powdered sodium thiosulfate is directly added to the ruthenium-containing liquid instead of a saturated aqueous solution mixed with ultrapure water. The molar equivalents in Table 1 are molar equivalents relative to the sum of the ruthenium-containing compound and the oxidizing agent.

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Abstract

The invention relates to a method for inhibiting the production of ruthenium-containing gas from a ruthenium-containing liquid. Provided is a method for suppressing the generation of RuO4 gas from a ruthenium-containing liquid in a process for manufacturing a semiconductor element. Provided is a method for suppressing the generation of RuO4 gas from a ruthenium-containing liquid by adding an inhibitor for the generation of RuO4 gas to the ruthenium-containing liquid in a semiconductor formation step or the like. Also provided is a RuO4 gas generation inhibitor containing at least one of a reducing agent and a basic compound.

Description

technical field [0001] The present invention relates to a method for suppressing RuO from a ruthenium-containing liquid generated in a semiconductor element manufacturing process 4 Novel approach to gas. Background technique [0002] In recent years, the miniaturization of design rules of semiconductor elements has progressed, and wiring resistance tends to increase. As a result of the increase in wiring resistance, the high-speed operation of the semiconductor element is significantly hindered, and measures need to be taken. Therefore, as a wiring material, a wiring material having reduced electromigration resistance and resistance value is desired as compared with conventional wiring materials. [0003] Compared with aluminum and copper which are conventional wiring materials, ruthenium is attracting attention as a wiring material whose design rule is 10nm or less especially for semiconductor elements because of its high electromigration resistance and the ability to red...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/38H01L21/3213
CPCC23F1/38H01L21/32134C23F1/46C23F1/40H01L21/02068H01L21/3212C23F1/44H01L21/30604
Inventor 佐藤伴光佐藤冬树根岸贵幸
Owner TOKUYAMA CORP