Semi-floating gate transistor, artificial synapse and synapse weight control method
A semi-floating gate transistor and floating gate technology, which is applied in the field of bionic information devices, can solve problems such as volatility, high energy consumption, and limited update range of synaptic weights, and achieve the effect of improving application value and realizing low power consumption drive
Pending Publication Date: 2022-02-01
BEIJING INST OF NANOENERGY & NANOSYST
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[0003] The embodiment of the present invention provides a semi-floating gate transistor, an artificial synapse, and a control method for synapse weight. By combining a triboelectric nanogenerator with a semi-floating gate transistor component, a friction-regulated semi-floating gate transistor is formed. When it is applied as an artificial synapse, it can solve the problems of high energy consumption, limited update range of synaptic weights, and volatility
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[0027] The specific implementation manners of a semi-floating gate transistor, an artificial synapse and a control method for a synapse weight provided by an embodiment of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0028] An embodiment of the present invention provides a semi-floating gate transistor, such as figure 1 As shown, it may include: a triboelectric nanogenerator 200 and a semi-floating gate transistor assembly 100;
[0029] The semi-floating gate transistor assembly 100 includes: a gate 10, and a gate insulating layer 20, a floating gate 30, a floating gate ins...
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The invention discloses a semi-floating gate transistor, an artificial synapse and a synapse weight control method. A friction nano-generator and a semi-floating gate transistor assembly are combined to form a friction-regulated semi-floating gate transistor; an electric signal generated by the friction nano-generator under the action of external force is used to replace a traditional gate voltage, so that the types of carriers in a channel layer and a floating gate are continuously regulated and controlled, and the working state of the channel layer is adjusted; and thus, the semi-floating gate transistor has the characteristics of conductivity non-volatility, low power consumption and the like. Moreover, when the semi-floating gate transistor is applied to the artificial synapse, an electric signal generated by the friction nano-generator under the action of external force can be used as signal input, so that compared with traditional signal input, the above signal input can better realize low-power-consumption driving and dynamic interaction with the external environment. and the synapse weight can be regulated and controlled in a large range, and the application value in the fields of self-driven bionics and intelligent interaction is improved.
Description
technical field [0001] The invention relates to the technical field of bionic information devices, in particular to a semi-floating gate transistor, an artificial synapse and a method for controlling synapse weight. Background technique [0002] There are two main types of artificial synapses currently developed: one is based on two-terminal devices with resistance changes, and its conductance can be continuously changed by applying pulse voltages, thereby simulating changes in synaptic weights; the other is based on transistor structures. For a three-terminal device, the doping level in the channel layer changes after the gate voltage is applied, and the corresponding source-drain current is modulated accordingly. However, the above two types of artificial synapses have poor stability, are easily affected by the external environment, and have high energy consumption. Contents of the invention [0003] The embodiment of the present invention provides a semi-floating gate ...
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IPC IPC(8): H01L29/788B81B7/02G06N3/063
CPCH01L29/788B81B7/02G06N3/063
Inventor 贾萌萌翟俊宜
Owner BEIJING INST OF NANOENERGY & NANOSYST