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Quantum dot, preparation method thereof and quantum dot film

A technology of quantum dots and boiling points, applied in the field of quantum dots and their preparation, can solve the problems of low fluorescence efficiency of quantum dots, and achieve the effects of maintaining light conversion efficiency, improving optical utilization, and enhancing light absorption efficiency

Pending Publication Date: 2022-02-11
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a quantum dot and its preparation method, quantum dot film, which can solve the existing problems in the prior art when improving the reliability, light absorption efficiency and light conversion efficiency of quantum dots, which need to be outsourced to the quantum dot core. Covering the transition shell layer requires ligand modification on the surface of quantum dots, resulting in problems such as low fluorescence efficiency of quantum dots

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  • Quantum dot, preparation method thereof and quantum dot film
  • Quantum dot, preparation method thereof and quantum dot film
  • Quantum dot, preparation method thereof and quantum dot film

Examples

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Embodiment 1

[0036] like figure 1 As shown, this embodiment provides a quantum point 100. The quantum dot 100 includes a quantum dot core 1 and a metal shell 2.

[0037] Among them, quantum dot core 1 is divided into red quantum dot core and green quantum dot core. Among them, the materials of the red quantum dot include: cdse, cd 2 One of Setries and INAs; the materials of the green quantum dot include: Zncdse 2 , INP and CD 2 One of SSE. In this embodiment, the material of the quantum dot core 1 is CDSE. Wherein, the amount of the quantum dot core 1 ranges from 1 nm to 10 nm.

[0038] Wherein, the metal shell 2 covers the quantum dot core 1. The material of the metal shell 2 includes Ag, Ag @ SiO 2 , AG @ Tio 2 One or more of AG @ PS, AG @ PMMA and AG @ PE. In this embodiment, the material of the metal shell 2 is Ag, and the absorption peak of Ag ranges from 430 nm to 500 nm. The outer wall of the metal shell 2 ranges from 100 nm to 150 nm. The light absorption efficiency of the quantum poin...

Embodiment 2

[0064] like Figure 4 As shown, this embodiment provides a quantum point 100. The quantum dot 100 includes: quantum dot core 1, casing 5, and metal shell 2.

[0065] Among them, quantum dot core 1 is divided into red quantum dot core and green quantum dot core. Among them, the materials of the red quantum dot include: cdse, cd 2 One of Setries and INAs; the materials of the green quantum dot include: Zncdse 2 , INP and CD 2 One of SSE. In this embodiment, the material of the quantum dot core 1 is CDSE. Wherein, the amount of the quantum dot core 1 ranges from 1 nm to 10 nm.

[0066] Wherein, the casing 5 is covered with the outer wall of the quantum dot core 1. The material of the casing 5 is a wide band gap material comprising cds, znse, zncds. 2 One or more of ZnS and ZnO. In this embodiment, the material of the casing 5 is ZnS. Wherein, the thickness of the casing 5 ranges from 0.5 nm to 10 nm. By coating the casing 5 on the outer wall of the quantum dot core 1, the relief of th...

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Abstract

The invention relates to a quantum dot, a preparation method thereof and a quantum dot film. The quantum dot comprises a quantum dot core and a metal shell, and a hollow circular ring is formed between the inner wall of the metal shell and the outer wall of the quantum dot core. The Kirkendall effect is utilized, the periphery of the quantum dot core is coated with the metal shell, and it is avoided that in the prior art, a transition shell layer such as SiO2 is utilized for ensuring the distance between the quantum dot core and the metal shell; and ligand modification on the quantum dots is avoided, so that reduction of the fluorescence efficiency of the quantum dots is avoided, and the original light conversion efficiency of the quantum dots is maintained. By using the surface plasmon resonance effect of the metal shell, the light absorption efficiency of the quantum dots is enhanced, the optical utilization rate of the quantum dots is improved, and the luminance of the quantum dots is improved. The compactness of the metal shell is utilized to effectively block water and oxygen permeation.

Description

Technical field [0001] The present application relates to the field of quantum dots, and more particularly to a quantum dot and a preparation method thereof. Background technique [0002] Quantum dots (full name: Quantum Dot, referred to as QD) is a nanometer semiconductor. The quantum dot has a narrow, dimensionally controlling fluorescent color, high color gamut, and wide viewing angle wide, is widely used in display technology products. With the sub-millimeter light emitting diode (English full name: mini LED), micron light-emitting diode (English full name: Micro LED), organic light emitting diode (English full name: Organic Light-Emitting Diode, referred to as OLED) backlight technology can show excellent picture quality, It is the most competitive display product in the future. [0003] At present, a development trend of quantum dots is to enhance the reliability of quantum dots. At present, it is mainly to cover a variety of shell structures in the quantum dot, such as SiO...

Claims

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Application Information

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IPC IPC(8): C09K11/88B82Y20/00B82Y40/00C09K11/02
CPCC09K11/883B82Y20/00B82Y40/00C09K11/02C09K11/58
Inventor 周淼
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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