Silicon carbide epitaxial growth device

Abstract

The invention discloses a silicon carbide epitaxial growth device. The silicon carbide epitaxial growth device comprises: a reaction module in which a reaction chamber is arranged; a spraying part assembly configured on the reaction module and comprising a plurality of independent cavities, wherein the plurality of cavities are respectively connected to a gas source for providing gas through pipelines and are respectively communicated with the reaction cavity through a gas outlet channel, the gas outlet channel comprising a gas guide pipe section, a pressure equalizing pipe section and a diffusion pipe section which are connected in sequence, the diameter of the gas guide pipe section being larger than that of the pressure equalizing pipe section; and a tray assembly arranged at the bottom of the reaction cavity and opposite to the spraying part assembly, wherein the top of the tray assembly is used for placing a substrate; and when the reaction module operates, gas flows into the matched cavity, is mixed in the cavity, then flows out of the matched gas outlet channel and flows into the reaction cavity. Reaction gas types adopted by the silicon carbide epitaxial growth device can be flexibly combined, and the silicon carbide epitaxial growth device has great universality.

Description

technical field [0001] The present application relates to the field of semiconductor equipment, in particular to a silicon carbide epitaxial growth device. Background technique [0002] The silicon carbide epitaxial growth device is a high-tech equipment integrating gas transportation, gas mixing, vacuum, high temperature, rotation and other technologies. When the epitaxial growth device is in operation, the reaction gas flows into the spray device, is mixed and distributed by the spray device, and then flows into the reaction chamber. In the reaction chamber, the reaction gas reacts chemically on the surface of the substrate to grow a single crystal film. Most of the current spray devices of silicon carbide epitaxial growth devices adopt the structure of a single gas inlet cavity. Under this structure, the gas outlet uniformity is poor and the temperature at the gas outlet side is not uniform, and the spray device is prone to thermal deformation. [0003] Therefore, it is ...

AI Technical Summary

Problems solved by technology

Most of the spraying devices of the current SiC epitaxial growth devices adopt the structure of a single inlet cavity. Under this structure, the gas outlet uniformity is poor and the temperature on the side of the gas outlet is not uniform, and the spraying device is prone to thermal deformation.

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