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Growth method of cadmium telluride crystal

A growth method and technology of cadmium telluride, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of inability to solve the problem of large-size single crystal growth, and achieve high single crystal rate, simple process, dislocation low density effect

Pending Publication Date: 2022-02-18
安徽光智科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to overcome the difficulties in the crystal growth process, researchers have developed a variety of cadmium telluride crystal growth methods, including VB method, VGF method, THM method, etc., but none of them can solve the problem of growing large-sized single crystals.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Step 1, placing a cadmium telluride seed crystal at the bottom of the crucible at a height of 30 mm, placing a tellurium-cadmium mixture with a molar ratio of 2:1 on the seed crystal, and sealing the crucible;

[0023] Step 2, put the crucible into the growth furnace, and raise the temperature to 966°C to melt the tellurium-cadmium mixture;

[0024] Step 3: Cool down at a rate of 0.5°C / h to gradually precipitate cadmium telluride until the temperature drops to 450°C, then rapidly cool down at a rate of 25°C / h to obtain cadmium telluride crystals.

[0025] After testing, the cadmium telluride single crystal rate is 75%, and the dislocation density is 3×10 3 cm -2 .

Embodiment 2

[0027] Step 1, placing the cadmium telluride seed crystal at the bottom of the crucible at a height of 15 mm, placing a tellurium-cadmium mixture with a molar ratio of 4:1 on the seed crystal, and sealing the crucible;

[0028] Step 2, put the crucible into the growth furnace, and raise the temperature to 823°C to melt the tellurium-cadmium mixture;

[0029] Step 3: Cool down at a rate of 0.1°C / h to gradually precipitate cadmium telluride until the temperature drops to 450°C, then rapidly cool down at a rate of 5°C / h to obtain cadmium telluride crystals.

[0030] After testing, the cadmium telluride single crystal rate is 85%, and the dislocation density is 1.5×10 3 cm -2 .

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Abstract

The invention discloses a growth method of a cadmium telluride crystal, which comprises the steps of 1, placing a cadmium telluride seed crystal at the bottom of a crucible, placing a tellurium-cadmium mixture on the seed crystal, and sealing the crucible; 2, putting the crucible into a growth furnace, and heating to melt the tellurium-cadmium mixture; and 3, cooling at the speed V1 of less than or equal to 0.5 DEG C / h to gradually separate out cadmium telluride, and rapidly cooling at the speed V2 of less than or equal to 25 DEG C / h until the temperature is reduced to 450 DEG C to obtain the cadmium telluride crystal. The growth method of the cadmium telluride crystal is simple in process, and the single crystal prepared by the method has the advantages of high single crystal rate and low dislocation density.

Description

technical field [0001] The invention relates to the field of crystal preparation, in particular to a method for growing cadmium telluride crystals. Background technique [0002] Cadmium telluride crystal is an important semiconductor crystal with a zinc blende structure and a direct transition energy band structure with a forbidden band width of 1.45eV. CdTe can easily obtain n-type or p-type semiconductor materials by doping different impurities. When In replaces the position of Cd, an n-type semiconductor is formed. When the position of Cd is replaced by Cu, Ag, Au, a p-type semiconductor is formed. Cadmium telluride crystals can be used in spectral analysis, infrared electro-optic modulators, infrared detectors, infrared lenses and windows, phosphors, room temperature gamma-ray detectors, light-emitting devices close to the visible light region, etc. [0003] It is difficult to make cadmium telluride into large-diameter bulk single crystals, and many materials are most...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B11/00C30B11/14
CPCC30B29/48C30B11/00C30B11/14
Inventor 狄聚青李康苏湛
Owner 安徽光智科技有限公司
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