Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof, and the manufacturing method of the semiconductor structure comprises the steps of providing a substrate which comprises active regions and isolation regions located between the adjacent active regions, and the active regions comprise corner regions adjacent to the isolation regions; performing a doping process, injecting doping ions into the corner area, where the doping ions are used for slowing down the oxidation rate of the corner area; and after the doping process is carried out, performing a removal process on the substrate, where the oxidized substrate can be removed through the removal process, and in the process of carrying out the removal process, the structures in the isolation regions expose the side walls of the corner regions. The structure integrity of the corner area of the active area can be maintained.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the shrinking of the size of semiconductor structures, the extra consumption of film layer materials may lead to large performance defects in the process of fabricating semiconductor structures. [0003] Specifically, a semiconductor structure usually includes an array area and a peripheral area surrounding the array area. When the underlying substrate of the array area and the peripheral area is etched and cleaned, the underlying substrate will be partially consumed or even the film layer will fall off. , the consumption of the substrate material will lead to performance defects of the substrate, such as leakage and so on. Contents of the invention [0004] Embodiments of the present invention provide a semiconductor structure and a method for forming the sa...

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Problems solved by technology

[0002] With the shrinking of the size of semiconductor structures, the additional consumption of film materials may lead to large performance defects in the process of fabricating semiconductor structures

[0003] Specifically, a semiconductor structure usually includes an array area and a peripheral area surrounding the array area. When the underlying substrate of the array area and the peripheral area is etched and cleaned, the underlying substrate will be partially consumed or even film layers will fall off. , the consumption of substrate material will lead to performance defects of the substrate, such as leakage, etc.

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