High electron mobility transistor
A high electron mobility, transistor technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as changes, unfavorable fast switching of HEMTs, and affecting the performance of semiconductor devices, so as to reduce the deviation of threshold voltage and avoid gate delay. effect of effect
Pending Publication Date: 2022-02-18
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Problems solved by technology
However, for existing HEMTs, due to the gate-lag effect, the threshold voltage (threshold voltage, Vt) usually varies with the value of the gate voltage.
For example, the threshold voltage deviation (ΔVt) corresponding to the on-state and the off-state is usually different, which is not conducive to fast switching of HEMTs, thus affecting the performance of semiconductor devices
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[0042] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0043] The invention provides several different embodiments that can be used to implement the different features of the invention. Embodiments of specific components and arrangements are also described herein for simplicity of illustration. These examples are provided for the purpose of illustration only, without any limitation. For example, the following description of "the first feature is formed on or over the second feature" may refer to "the first feature is in direct contact with the second feature" or "the first feature is in direct contact with the second feature". There are other features between the features", so that the first feature is not in direct contact with the second feature.
[0044] In addition, for the space-related descriptive words mentioned in the present invention, for example: "below", "low", "under", "above", "abov...
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Abstract
The invention discloses a high electron mobility transistor, comprising a channel layer arranged on a substrate; a barrier layer arranged on the channel layer; a first compound semiconductor layer disposed on the barrier layer; and a second compound semiconductor layer disposed between the barrier layer and the first compound semiconductor layer. Wherein the first compound semiconductor layer and the second compound semiconductor layer include a concentration profile of a metal dopant, the concentration profile having a first peak on the first compound semiconductor layer, and the concentration profile having a second peak on the second compound semiconductor layer.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a high electron mobility transistor. Background technique [0002] In semiconductor technology, III-V semiconductor compounds can be used to form various integrated circuit devices, such as high power field effect transistors, high frequency transistors or high electron mobility transistors (high electron mobility transistors, HEMTs). HEMT is a type of transistor with two dimensional electron gas (2-DEG), and its 2-DEG will be adjacent to the junction between two materials with different energy gaps (ie, heterojunction) . Since HEMT does not use the doped region as the carrier channel of the transistor, but uses 2-DEG as the carrier channel of the transistor, compared with the known metal oxide semiconductor field effect transistor (MOSFET), HEMT has many attractive advantages. properties such as high electron mobility and the ability to transmit signals at high f...
Claims
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IPC IPC(8): H01L29/778H01L29/10H01L29/15
CPCH01L29/7783H01L29/152H01L29/1033
Inventor 钒达·卢黄嘉庆陈志谚
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION