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Drive circuit and switching power supply device

A driving circuit and circuit technology, applied in the direction of electronic switches, high-efficiency power electronic conversion, output power conversion devices, etc., can solve the problems of PNP type Q2 damage, limitations, etc. The effect of breaking loss and simple design

Pending Publication Date: 2022-02-22
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the drive transformer is reversely reset, a large reset current flows in the PNP transistor Q2 because there is no resistor to limit the current, which even causes damage to the PNP transistor Q2
Therefore, Patent Document 1 is only applicable to applications where the input drive signal is a unidirectional pulse, so its application is limited

Method used

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  • Drive circuit and switching power supply device
  • Drive circuit and switching power supply device
  • Drive circuit and switching power supply device

Examples

Experimental program
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Embodiment Construction

[0034] Hereinafter, a switching power supply device 1 according to an embodiment of the present invention will be described with reference to the drawings.

[0035] figure 1It is a circuit diagram of a switching power supply device according to an embodiment of the present invention. The switching power supply device 1 includes a full bridge circuit in each of the primary side circuit 10 and the secondary side circuit 20 , and is connected via an insulating transformer (transformer) 120 . A transformer has a primary coil and a secondary coil.

[0036] The primary side circuit 10 includes a primary side bridge circuit B1, an input capacitor Cin connected to the primary side bridge circuit B1, and an inductor Lr.

[0037] The secondary side circuit 20 includes a secondary side bridge circuit B2, an inductor Lf connected to the secondary side bridge circuit B2, and a smoothing capacitor Co.

[0038] The primary side bridge circuit B1 includes a first switching element Q101, a...

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PUM

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Abstract

A drive circuit provided by the invention drives a first switching element, and is provided with: a first diode having a cathode terminal connected to a gate terminal of the first switching element; a second switching element, wherein the first terminal of the second switching element is connected to the anode terminal of the first diode, the second terminal of the second switching element is connected to the gate terminal of the first switching element, and the third terminal of the second switching element is connected to the source terminal of the first switching element; a third switching element having a drain terminal connected to the anode terminal of the first diode and a source terminal connected to the source terminal of the first switching element; a parallel circuit including a Zener diode and a first capacitor; and a drive transformer having a coil, wherein one end of the coil being connected to the drain terminal of the third switching element via a parallel circuit, the other end of the coil being connected to the gate terminal of the third switching element and connected to the source terminal of the third switching element via a second diode, one end of the parallel circuit being connected to one end of the coil, and the cathode terminal of the second diode is connected to the other end of the coil.

Description

technical field [0001] The present invention relates to a drive circuit for driving a main switching element and a switching power supply device for performing power conversion by the main switching element being turned on and off at a predetermined frequency. Background technique [0002] As the core component of switching power supply, MOSFET is widely used in DC / DC converters because of its advantages of voltage-type drive, high operating frequency, and no current tailing when it is turned off. With the development of miniaturized, modularized, and high-power-density switching power supplies, the requirements for efficiency indicators continue to increase. A new generation of high-speed super-junction MOSFETs are also being introduced continuously. The on-resistance, as a key parameter to reduce losses, is getting lower and lower, but another performance parameter of the MOSFET, the input capacitance, increases with the increase of its capacity. The input capacitance slo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/088H02M3/335
CPCH02M1/08H02M1/088H02M3/33576H02M3/33584H02M3/33573H03K17/691Y02B70/10H02M1/0054
Inventor 阙声浩邹炼文秦庆鲁
Owner TDK CORPARATION