Infrared detector based on complementary metal oxide semiconductor (CMOS) process

Abstract

The invention relates to an infrared detector based on a CMOS process. The infrared detector comprises pixels, each pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure directly prepared on the CMOS measurement circuit system, and the CMOS measurement circuit system and the CMOS infrared sensing structure are prepared by adopting the CMOS process; each CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, each columnar structure comprises at least two layers of columns which are arranged in an overlapped mode and is located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the columnar structures and the supporting base; the infrared conversion structure comprises an absorption plate and a plurality of beam structures, and the absorption plate is electrically connected with the columnar structure through the corresponding beam structures; at least two infrared detector pixels share at least one columnar structure; each pixel of the infrared detector further comprises a reinforcing structure. The reinforcing structures are used for enhancing the connection stability between the columnar structures and the infrared conversion structures. The problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is prepared by MEMS (M...

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector based on CMOS technology, which solves the problems of low performance, low pixel scale and low yield rate of traditional MEMS technology infrared detectors, Simultaneously improved duty cycle and sensitivity, and enhanced structural stability

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