Infrared detector pixel based on complementary metal oxide semiconductor (CMOS) process and infrared detector

Abstract

The invention relates to an infrared detector pixel based on a CMOS (Complementary Metal Oxide Semiconductor) process and an infrared detector, and the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system, and is prepared by adopting a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures which are located on the CMOS measuring circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the columnar structures and the supporting base; the infrared conversion structure comprises an absorption plate and a plurality of beam structures, and the absorption plate is used for converting infrared signals into electric signals and is electrically connected with the corresponding columnar structures through the corresponding beam structures; the infrared detector pixel further comprises a reinforcing structure. And the reinforcing structure is used for enhancing the connection stability between the columnar structure and the beam structure. Therefore, the problems of low performance, low pixel scale, low yield and the like of a traditional MEMS process infrared detector are solved; and the structural stability is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector pixel and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensi...

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector pixel and an infrared detector based on a CMOS process, which solves the problem of low performance and low pixel scale of traditional MEMS process infrared detectors. Low yield rate and other issues, while improving structural stability

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