High-speed silicon light modulator phase shift arm and preparation method thereof

Abstract

The invention relates to the field of optical communication, and provides a high-speed silicon optical modulator phase shift arm and a preparation method thereof, and the high-speed silicon optical modulator phase shift arm comprises a ridge waveguide; the P-type doped region and the N-type doped region are located on the two sides of the ridge waveguide respectively. The P-type doped region comprises a P-type heavily doped region and a P-type lightly doped region; the P-type heavily doped region is located in a boundary region of the ridge waveguide, and the P-type lightly doped region is located in a core region of the ridge waveguide; the N-type doped region comprises an N-type heavily doped region and an N-type lightly doped region; the N-type heavily doped region is located in a boundary region of the ridge waveguide, and the N-type lightly doped region is located in a core region of the ridge waveguide; according to the invention, high-concentration ion doping is carried out in a boundary region with a relatively weak light field in the ridge-shaped waveguide, and low-concentration ion doping is carried out in a core region with a relatively strong light field in the ridge-shaped waveguide, so that the bandwidth of the silicon light modulator is improved, and meanwhile, the optical loss cannot be greatly increased.

Description

technical field [0001] The invention relates to the field of optical communication, in particular to a phase-shift arm of a high-speed silicon optical modulator and a preparation method thereof. Background technique [0002] In an optical communication system, the optical transmitting unit is an essential part, and the optical modulator is the core unit for converting electrical and optical signals. At present, optical modulators are based on three major categories of functional materials, lithium niobate, III-V compound semiconductors, and silicon materials. In terms of modulator performance, especially optoelectronic bandwidth and optical loss, lithium niobate and III-V compound semiconductor materials are significantly better than silicon materials, but silicon materials are more suitable for mass production, functional integration, and subsequent packaging The performance improvement of silicon optical modulators can bring greater economic benefits. [0003] The core o...

AI Technical Summary

Problems solved by technology

The main physical structure based on silicon optical modulator is PN junction or PIN junction, so the doping concentration in PN junction or PIN junction determines the basic performance of silicon optical modulator, generally speaking, the doping concentration of PN junction or PIN junction The higher the PN junction or PIN junction response will be block, because high doping concentration can reduce the internal resistance of PN junction or PIN junction, improve the bandwidth of silicon light modulator, however, increase the doping of PN junction or PIN junction The concentration will cause more optical loss, and the optical loss is determined by the product of the doping concentration and the optical field intensity; therefore, new methods and technologies are needed to eliminate or alleviate the problem of the bandwidth and optical loss design contradiction of silicon optical modulators

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