Semiconductor device and manufacturing method thereof

Abstract

The invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a semiconductor substrate, and the semiconductor substrate comprises a plurality of chip areas and cutting channels used for separating the chip areas; a test structure is formed in the cutting channel, the test structure comprises an active region and a connecting structure, the active region is formed in the semiconductor substrate, the connecting structure is located at the end part of the active region, and the plurality of active regions located on the same column are sequentially connected end to end through the connecting structure; the test structure is used for bit line contact resistance test. In the embodiment of the invention, the semiconductor device is provided with a test structure for testing the bit line contact resistance in a cutting channel, and a plurality of active regions in the same column are sequentially connected end to end through a connection structure at the end part of the active region, so that the sum of the contact resistance of a plurality of bit lines in the same column and the resistance value of the active regions is obtained; the problem that measurement is inaccurate due to the fact that the shallow trench isolation structure is abnormal is solved, the testing accuracy is improved, and then the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage devices, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the shrinking of the size of semiconductor devices, the 17nm Dynamic Random Access Memory (DRAM) process is equivalent to the 19nm DRAM, the size of the transistors in the memory cell array area and the peripheral circuit area is getting smaller and smaller, and the process is complicated In order to monitor the manufacturing process of semiconductor devices to ensure the reliability of semiconductor devices, the usual practice is to form a test structure (testkey) in semiconductor devices for testing and testing of some key parameters of semiconductor devices. Simulation to ensure the quality of semiconductor devices shipped. [0003] The test of the key parameters of the semiconductor device includes the test of the resistance of the semiconductor device and the ...

AI Technical Summary

Problems solved by technology

[0004] The invention provides a semiconductor device and a manufacturing method thereof to solve the problem that the test structure in the current semiconductor device cannot accurately reflect the contact situation

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