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Film layer preparation method, light-emitting substrate and light-emitting device

A film layer and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problem of uneven film thickness

Pending Publication Date: 2022-03-04
BEIJING BOE TECH DEV CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the light-emitting substrate prepared by the related technology, the film layers such as the hole transport layer, the light-emitting layer, and the electron transport layer in the light-emitting region have the problem of uneven film thickness.

Method used

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  • Film layer preparation method, light-emitting substrate and light-emitting device
  • Film layer preparation method, light-emitting substrate and light-emitting device
  • Film layer preparation method, light-emitting substrate and light-emitting device

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Embodiment Construction

[0064] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments It is a part of the embodiments of the present disclosure, but not all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present disclosure.

[0065] The patterning process of the film layer in the light emitting device includes an inkjet printing method, a photolithographic patterning method, a scraping method, a spraying method and the like. Among them, the inkjet printing method is a relatively common and relatively mature method. Inkjet printing is a process in which ink is sp...

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PUM

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Abstract

The invention provides a film layer preparation method, a light-emitting substrate and a light-emitting device.The film layer preparation method is used for forming a first functional film layer on a substrate and comprises the steps that a first initial film layer is formed on the substrate in a patterning mode, the first initial film layer has conductivity and comprises a first liquid crystal material, and the first liquid crystal material is formed on the substrate; the melting point of the first liquid crystal material is higher than the ambient temperature of the first functional film layer; the first initial film layer is heated to a first preset temperature, so that the first liquid crystal material is in a liquid state; the first liquid crystal material in the liquid state is cooled to a second preset temperature, so that the first liquid crystal material is in a solid state, and a first functional film layer is obtained; wherein the first preset temperature is higher than the melting point or clearing point of the first liquid crystal material and lower than the bearable temperature of the substrate; the second preset temperature is lower than the melting point of the first liquid crystal material. According to the technical scheme, the first functional film layer with the flat surface can be formed.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for preparing a film layer, a light-emitting substrate and a light-emitting device. Background technique [0002] Organic Light-Emitting Diode (OLED) has the characteristics of self-illumination, wide viewing angle, fast response time, high luminous efficiency, low working voltage and simple manufacturing process, and is known as the next-generation "star" light-emitting device. Compared with organic light-emitting diodes (Organic Light-Emitting Diodes, OLEDs), quantum dot light-emitting diodes (Quantum Dot Light Emitting Diodes, QLEDs) have the advantages of narrow luminescence peaks, high color saturation, and wide color gamut. [0003] The light emitting substrate may be composed of OLED, QLED or other light emitting devices. In the light-emitting substrate prepared in the related art, the film layers such as the hole transport layer, the light-emitti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/13H10K85/731H10K50/15H10K50/16H10K50/11
Inventor 张晓远王好伟张渊明
Owner BEIJING BOE TECH DEV CO LTD
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