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Resistive random access memory and preparation method thereof

A technology of resistive memory and resistive layer, which is applied in ion implantation plating, gaseous chemical plating, coating and other directions, can solve the problem that the resistance window cannot be further improved, and achieves reduction of production cost, simple preparation process, and increased production cost. The effect of large resistance

Pending Publication Date: 2022-03-08
杭州国家集成电路设计产业化基地有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a resistive variable memory and its preparation method to solve the technical problem that the high resistance state of the resistive variable memory in the above-mentioned prior art inevitably has a certain current, resulting in that the resistance window cannot be further improved

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  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof

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Embodiment 1

[0037] Such as figure 1 As shown, this embodiment includes a resistive variable memory, including: a substrate; a lower electrode, the lower electrode is connected to the substrate; a resistive layer, the resistive layer is connected to the lower electrode; an upper electrode, the upper electrode is connected to the resistive The layers are connected, and the resistance switch layer is arranged between the lower electrode and the upper electrode.

[0038] The resistive switch layer includes a first metal oxide layer, a second metal oxide layer and a storage window layer, the first metal oxide layer is respectively connected to the lower electrode and the second metal oxide layer, and the second metal oxide layer is respectively connected to the The first metal oxide layer is connected to the storage window layer, and the storage window layer is respectively connected to the upper electrode and the second metal oxide layer.

[0039] The material of the first metal oxide layer ...

Embodiment 2

[0046] Such as figure 2 As shown, this embodiment includes a method for preparing a resistive variable memory, including the following steps: selecting a silicon wafer as a substrate and cleaning it, depositing and forming a lower electrode on the substrate; depositing and forming a resistive variable layer on the lower electrode, The resistive layer is sequentially fabricated with a first metal oxide layer, a second metal oxide layer and a storage window layer;

[0047] The upper electrode is deposited on the storage window layer; the pattern of the lower electrode, the resistive layer and the upper electrode is processed by photolithography technology, and the multiple resistive memories composed of the lower electrode, the resistive layer and the upper electrode are isolated from each other.

[0048] Specifically, in this embodiment, a silicon wafer with silicon oxide can be selected as the substrate and cleaned, wherein the silicon oxide is used as an isolation layer for ...

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Abstract

The invention discloses a resistive random access memory and a preparation method thereof. The resistive random access memory comprises a substrate; the lower electrode is connected with the substrate; the resistive layer is connected with the lower electrode; the resistive random access memory has the beneficial effects that a large number of oxygen atoms are absorbed or released when the resistive random access memory is converted between a high-resistance state and a low-resistance state, and the oxygen atoms are absorbed or released when the resistive random access memory is converted from the low-resistance state to the high-resistance state. A large number of released oxygen atoms can greatly promote disconnection of conductive filaments in the resistive random access layer, the conductive filaments can be disconnected more thoroughly, and the resistance between electrodes is increased by effectively strengthening disconnection of conductive filament channels in the resistive random access layer, so that the effect of enlarging a storage window of the resistive random access memory is achieved.

Description

technical field [0001] The invention belongs to the technical field of resistive memory, and more specifically, the invention relates to a resistive memory and a preparation method thereof. Background technique [0002] Memristor is the fourth basic passive circuit element after resistors, capacitors and inductors. Since the internal resistance of memristor can change with the voltage at both ends, memristor is actually a memory function The resistor can be used as a memory element. The resistive variable memory is a kind of memristor. The information storage of the resistive variable memory is realized by changing the resistance of the resistive variable layer. The resistive variable layer has two states of high resistance and low resistance, which can be passed between two electrodes. A voltage is applied to change the state of the resistive variable layer, and the resistive state of the resistive variable layer can be maintained after the voltage is removed. [0003] Th...

Claims

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Application Information

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IPC IPC(8): H01L45/00C23C14/08C23C14/34C23C16/40C23C16/455
CPCC23C14/083C23C14/34C23C16/403C23C16/45525C23C14/085H10N70/026H10N70/8833
Inventor 丁勇严麒陈丽霞任佳莹胡颖蔚蔡舒群
Owner 杭州国家集成电路设计产业化基地有限公司