Research and development method of large-size semiconductor diamond wire fine wire cutting technology

Abstract

The invention discloses a research and development method of a large-size semiconductor diamond wire fine wire cutting technology, and the research and development method comprises the following steps: S1, firstly, carrying out cutting fluid development, carrying out comparison tests one by one by comparing parameter performances of existing domestic cutting fluids, and carrying out exclusive cutting fluid performance customization by combining with national manufacturers; the cutting fluid needs to have the main characteristic of low surface tension, good permeability is beneficial to rapid removal of silicon chips and reduction of the line breaking rate in the cutting process, the cutting fluid also has low foaming performance, and the research and development of the cutting fluid have the same contrast test, and three domestic cutting fluid material manufacturers develop the cutting fluid in total to achieve the effect of successful trial, so that the cutting fluid has wide application prospects. According to the method, the localization transformation of semiconductor wire cutting equipment can be promoted, the manufacturing cost of silicon wafers is greatly reduced, the international competitiveness is improved, the kerf loss is effectively reduced, and the machining speed is greatly increased.

Description

technical field [0001] The invention relates to the technical field of thin-wire cutting of large-size semiconductor diamond wires, in particular to a research and development method for thin-wire cutting technology of large-size semiconductor diamond wires. Background technique [0002] At present, the known mortar wire cutting is a cutting method in which silicon carbide particles are mixed with a certain proportion of cutting fluid, and then the new mortar configured is carried by a steel wire for reciprocating cutting. [0003] Mortar wire cutting requires a relatively thick steel wire to carry silicon carbide particles and crystal rods for grinding, resulting in large kerf loss, slow processing speed, high cost, and auxiliary materials such as resin boards are micro-waste products, which are difficult to handle. Contents of the invention [0004] The purpose of the present invention is to provide a research and development method for large-scale semiconductor diamond ...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a research and development method for large-scale semiconductor diamond wire fine wire cutting technology, so as to solve the problem that the mortar wire cutting proposed in the above background technology requires relatively thick steel wires to carry silicon carbide particles and crystal rods for grinding. It leads to large cutting loss, slow processing speed, high cost, and auxiliary materials such as resin boards are micro-waste products, which are difficult to deal with.

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