Method for realizing slip measurement of film probe

Abstract

The invention relates to a method for realizing slip measurement of a thin film probe. The method is characterized in that an elastomer layer is arranged between a rigid acting surface in a thin film probe head and a thin film on which a probe is arranged; the elastic body layer is arranged on the axial plane of the probe, any axial line penetrating through the probe is taken as a boundary line, and the elastic force of one side of the elastic body layer is not equal to the elastic force of the other side of the elastic body layer, so that the probe can deflect during testing to generate measurement slippage so as to penetrate through or push away oxide on the surface layer of a tested chip, and more stable contact is realized.

Description

technical field [0001] The invention belongs to the technical field of probe cards and wafer testing, and in particular relates to a method for measuring slippage of a thin film probe, which is applicable to thin film probe heads and thin film probe cards. Background technique [0002] In recent years, with the development and popularization of 5G technology and consumer electronics technology, semiconductor devices continue to develop towards miniaturization, integration, and dense pad spacing, and the operating frequency continues to increase. Wafer-level testing for high frequencies has gradually become an RF An unobtainable and important part of chip production. Compared with other types of probe cards, the thin-film probe card realizes small-scale probe structure processing and high-precision signal line structure parameter control, reduces the generation of parasitic capacitance and inductance, greatly shortens the signal path, and improves The degree of impedance mat...

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Problems solved by technology

A significant disadvantage of this method is that the measured slip of the probe is related to the position of the probe relative to the center of the film, which is not uniform.

[0007]In the prior art, the most representative structure can be found in US Patent No. 7,893,704, which proposes a new thin-film probe structure, which is a probe design For a cantilever-like structure, the measurement of slippage is achieved by using the cantilever-like probe structure to rotate around the end of the cantilever during the test. However, in this way, the probe needs to repeatedly rotate around the end of the cantilever, and the stress is concentrated here. The film is easily damaged

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