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A kind of preparation method of foldable nano corrugated electrode

A nano-corrugated, electrode technology, applied in cable/conductor manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of limited practical application, low reliability of nanowire network interconnection, etc., to maintain electrical performance and high stability properties, the preparation method is simple, and the effect of increasing the ductility

Active Publication Date: 2022-08-09
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mechanical and electrical properties of nanowire network interconnects still suffer from low reliability, which limits their practical applications.

Method used

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  • A kind of preparation method of foldable nano corrugated electrode
  • A kind of preparation method of foldable nano corrugated electrode
  • A kind of preparation method of foldable nano corrugated electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Step 1. Clean the flat silicon wafer 2 with acetone, isopropanol and deionized water, respectively.

[0053] Step 2. Spin-coat transfer photoresist A on the upper surface of the pre-cleaned silicon wafer 2 at a spin-coating speed of 3000 rpm, spin-coating time for 40 seconds, and then bake at 150° C. for 8 minutes.

[0054] Step 3. Spin-coat the cellulose solution 3 on the silicon wafer 2 obtained in the step 2 at 3000 rpm for 40 seconds, and then bake at 80° C. for 8 minutes.

[0055] Step 4. Spin coating PDMS on the silicon wafer 2 obtained in Step 3 at a spin coating speed of 3000 rpm for 50 seconds to form a hybrid substrate 4 .

[0056] Step 5. Press the nano-corrugated mold 5 on the hybrid substrate 4 obtained in step 4, imprint the nano-corrugated structure, and bake at 80° C. for 1 hour; the nano-corrugated mold 5 has a continuous semicircular shape corrugated structure.

[0057] Step 6. Peel off the nano-corrugated mold 5 to obtain a nano-corrugated structure...

Embodiment 2

[0065] Step 1. Clean the flat silicon wafer 2 with acetone, isopropanol and deionized water, respectively.

[0066] Step 2. Spin coating transfer photoresist A on the upper surface of the pre-cleaned silicon wafer 2 at a spin coating speed of 3500 rpm for 45 seconds, and then bake at 180° C. for 10 min.

[0067] Step 3. Spin-coat the cellulose solution 3 on the silicon wafer 2 obtained in the step 2 at 3500 rpm for 45 seconds, and then bake at 90° C. for 10 minutes.

[0068] Step 4. Spin-coat PDMS on the silicon wafer 2 obtained in step 3 at a spin-coating speed of 3500 rpm for 60 seconds to form a hybrid substrate 4 .

[0069] Step 5. Press the nano-corrugated mold 5 on the hybrid substrate 4 obtained in step 4, imprint the nano-corrugated structure, and bake at 90° C. for 70 minutes; the nano-corrugated mold 5 has continuous semicircular corrugations structure.

[0070] Step 6. Peel off the nano-corrugated mold 5 to obtain a nano-corrugated structure substrate 6 with an or...

Embodiment 3

[0078] Step 1. Clean the flat silicon wafer 2 with acetone, isopropanol and deionized water, respectively.

[0079] Step 2. Spin coating transfer photoresist A on the upper surface of the pre-cleaned silicon wafer 2 at a spin coating speed of 4000 rpm for 50 seconds, and then bake at 200° C. for 12 min.

[0080] Step 3. Spin-coat the cellulose solution 3 on the silicon wafer 2 obtained in the step 2 at 4000 rpm for 40-50 seconds, and then bake at 100° C. for 12 minutes.

[0081] Step 4. Spin-coat PDMS on the silicon wafer 2 obtained in step 3 at a spin-coating speed of 4000 rpm for 80 seconds to form a hybrid substrate 4 .

[0082] Step 5. Press the nano-corrugated mold 5 on the hybrid substrate 4 obtained in step 4, imprint the nano-corrugated structure, and bake at a temperature of 100° C. for 1.5 hours; the nano-corrugated mold 5 has a continuous semicircular shape corrugated structure.

[0083] Step 6. Peel off the nano-corrugated mold 5 to obtain a nano-corrugated struc...

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Abstract

The invention discloses a preparation method of a foldable nano-corrugated electrode, so as to develop a flexible electrode with high foldable and easy mass production characteristics, super-large curvature and high stability. The electrode preparation method of the present invention includes the following steps: spin-coating photoresist, cellulose fiber solution and PDMS on a silicon wafer, obtaining a nano-corrugated structure substrate through nano-imprinting technology, and then using a dual-rotor substrate on it. A highly foldable nano-corrugated electrode is obtained by sputtering by non-center deposition method, followed by photolithography, and finally by component assembly and electrode peeling. The preparation method is simple and feasible, suitable for large-scale production of multiple electrical applications, and has good application prospects. The highly foldable nanocorrugated electrodes fabricated by this method demonstrate the possibility of exploring flexible electronic systems and wearable systems, and introduce emerging application directions for biomedical devices or shape-adaptive electronics.

Description

technical field [0001] The invention belongs to the technical field of electrode preparation, and in particular relates to a preparation method of a foldable nano-corrugated electrode. The nano-corrugated electrode prepared by the invention has super-high curvature and super-high stability. Background technique [0002] In multifunctional flexible electronic circuits, the realization of highly foldable conductive interconnects and the realization of ultra-large bending curvatures in flexible electronic systems have promising development prospects. Such properties are not only beneficial for wearables and other types of shape-adaptive devices, but also for biomedical electronics and other devices. Conventional metallized thin-film interconnects exhibit stable electronic performance in rigid devices, but suffer from low flexibility deformation limitations. Existing solutions are mainly based on the use of advanced materials and the construction of unconventional structures, s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00
CPCH01B13/0036Y02P70/50
Inventor 江诚鸣曾丽君孙楠彭艳
Owner DALIAN UNIV OF TECH