A kind of preparation method of foldable nano corrugated electrode
A nano-corrugated, electrode technology, applied in cable/conductor manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of limited practical application, low reliability of nanowire network interconnection, etc., to maintain electrical performance and high stability properties, the preparation method is simple, and the effect of increasing the ductility
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Embodiment 1
[0052] Step 1. Clean the flat silicon wafer 2 with acetone, isopropanol and deionized water, respectively.
[0053] Step 2. Spin-coat transfer photoresist A on the upper surface of the pre-cleaned silicon wafer 2 at a spin-coating speed of 3000 rpm, spin-coating time for 40 seconds, and then bake at 150° C. for 8 minutes.
[0054] Step 3. Spin-coat the cellulose solution 3 on the silicon wafer 2 obtained in the step 2 at 3000 rpm for 40 seconds, and then bake at 80° C. for 8 minutes.
[0055] Step 4. Spin coating PDMS on the silicon wafer 2 obtained in Step 3 at a spin coating speed of 3000 rpm for 50 seconds to form a hybrid substrate 4 .
[0056] Step 5. Press the nano-corrugated mold 5 on the hybrid substrate 4 obtained in step 4, imprint the nano-corrugated structure, and bake at 80° C. for 1 hour; the nano-corrugated mold 5 has a continuous semicircular shape corrugated structure.
[0057] Step 6. Peel off the nano-corrugated mold 5 to obtain a nano-corrugated structure...
Embodiment 2
[0065] Step 1. Clean the flat silicon wafer 2 with acetone, isopropanol and deionized water, respectively.
[0066] Step 2. Spin coating transfer photoresist A on the upper surface of the pre-cleaned silicon wafer 2 at a spin coating speed of 3500 rpm for 45 seconds, and then bake at 180° C. for 10 min.
[0067] Step 3. Spin-coat the cellulose solution 3 on the silicon wafer 2 obtained in the step 2 at 3500 rpm for 45 seconds, and then bake at 90° C. for 10 minutes.
[0068] Step 4. Spin-coat PDMS on the silicon wafer 2 obtained in step 3 at a spin-coating speed of 3500 rpm for 60 seconds to form a hybrid substrate 4 .
[0069] Step 5. Press the nano-corrugated mold 5 on the hybrid substrate 4 obtained in step 4, imprint the nano-corrugated structure, and bake at 90° C. for 70 minutes; the nano-corrugated mold 5 has continuous semicircular corrugations structure.
[0070] Step 6. Peel off the nano-corrugated mold 5 to obtain a nano-corrugated structure substrate 6 with an or...
Embodiment 3
[0078] Step 1. Clean the flat silicon wafer 2 with acetone, isopropanol and deionized water, respectively.
[0079] Step 2. Spin coating transfer photoresist A on the upper surface of the pre-cleaned silicon wafer 2 at a spin coating speed of 4000 rpm for 50 seconds, and then bake at 200° C. for 12 min.
[0080] Step 3. Spin-coat the cellulose solution 3 on the silicon wafer 2 obtained in the step 2 at 4000 rpm for 40-50 seconds, and then bake at 100° C. for 12 minutes.
[0081] Step 4. Spin-coat PDMS on the silicon wafer 2 obtained in step 3 at a spin-coating speed of 4000 rpm for 80 seconds to form a hybrid substrate 4 .
[0082] Step 5. Press the nano-corrugated mold 5 on the hybrid substrate 4 obtained in step 4, imprint the nano-corrugated structure, and bake at a temperature of 100° C. for 1.5 hours; the nano-corrugated mold 5 has a continuous semicircular shape corrugated structure.
[0083] Step 6. Peel off the nano-corrugated mold 5 to obtain a nano-corrugated struc...
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