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Novel FET pulse power amplifier

A pulse power and amplifier technology, applied in the field of new FET pulse power amplifiers, can solve the problems affecting the stability of amplifiers and circuits, reducing the signal-to-noise ratio, and narrow amplifier bandwidth. The effect of bandwidth

Pending Publication Date: 2022-03-25
CNGC INST NO 206 OF CHINA ARMS IND GRP
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Problems solved by technology

The disadvantage of this design form is that the bandwidth of the amplifier is narrow, and there is video signal leakage, which affects the stability of the amplifier and the circuit, and reduces the signal-to-noise ratio of the signal.

Method used

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Embodiment Construction

[0016] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

[0017] Add a high-impedance quarter-wavelength ground wire (open circuit state for RF signals) at the input end of the amplifier (before the DC blocking capacitor) and the output end (after the DC blocking capacitor) to directly ground the video leakage signal to avoid The video leakage signal at the output of the first-stage amplifier directly affects the input signal of the next-stage amplifier. After pass...

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Abstract

The invention relates to a novel FET pulse power amplifier, and belongs to the technical field of microwave circuit design. Firstly, aiming at the narrow bandwidth of the amplifier, a low-impedance quarter-wavelength bias line in a circuit is changed into a bypass capacitor, so that firstly, microwave radiation in a cavity can be effectively reduced, and mutual crosstalk between signals is reduced; and secondly, the bandwidth of the amplifier can be effectively improved. And secondly, aiming at the influence of video signal leakage on the circuit, high-impedance quarter-wavelength grounding wires are additionally arranged at the input end (in front of a direct current blocking capacitor) and the output end (behind the direct current blocking capacitor) of the amplifier, so that the leakage of the video signal is effectively reduced, the stability and reliability of the amplifier and the circuit are improved, and meanwhile, the signal-to-noise ratio of the output signal is improved. The circuit is simple in form and easy to realize.

Description

technical field [0001] The invention relates to the technical field of microwave circuit design, in particular to a novel FET pulse power amplifier, which can be applied to phased array radars, T / R components, and solid-state transmitters. Background technique [0002] The FET pulse power amplifier is mainly used in the T / R component of the phased array radar, which is mainly used to amplify the received signal. [0003] In the past, the design form of FET amplifiers was relatively simple. The input and output terminals added a DC blocking capacitor and a feed network, and the bias matching was realized through a low-impedance quarter-open line (see figure 1 ). The disadvantage of this design form is that the bandwidth of the amplifier is narrow, and there is video signal leakage, which affects the stability of the amplifier and the circuit, and reduces the signal-to-noise ratio of the signal. Contents of the invention [0004] technical problem to be solved [0005] Ai...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/21H03F1/42
CPCH03F3/21H03F1/42
Inventor 杨斐雷国忠马云柱杨景超王海涛
Owner CNGC INST NO 206 OF CHINA ARMS IND GRP
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