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Spray type photoresist coating method

A photoresist and spray-type technology, which is applied in the direction of photoplate-making process coating equipment, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of poor uniformity, achieve the problem of poor uniformity, and the overall operation is simple and easy to implement Effect

Pending Publication Date: 2022-03-29
芯达半导体设备(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the shortcomings in the prior art. The method can make the film on the surface of the wafer uniform and free of bubbles. Cooperating with the covering spray glue coating action, the problem of poor uniformity can be solved, and the deposition of bubbles on the light can be reduced. Resist film surface

Method used

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Experimental program
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Embodiment 1

[0037] A photoresist spray type coating method, comprising the steps of:

[0038] In the specific gluing process, the wafer can be set to any desired shape, and the specific shape of its surface is not limited. Here, taking a circle as an example, first calculate the temperature increase ΔT during the heating process, and calculate the unglued wafer The heat transfer coefficient K, the calculation process is as follows:

[0039] K 0 =dQ / (T 1 -T 0 )dS

[0040] Among them, the surface temperature T0 of the heating plate is obtained by the temperature sensor, the surface area dS of the wafer is directly measured by the staff, and the heat output by the heating plate dQ is obtained from the design value of the electric heating plate, K 0 is the heat transfer coefficient of the uncoated wafer, T 1 is the wafer surface temperature, T 0 is the surface temperature of the heating plate, dS is the surface area of ​​the wafer, and dQ is the heat output by the heating plate. Throug...

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PUM

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Abstract

The invention discloses a photoresist spraying type gluing method which comprises the following steps: sending a wafer to be processed to a designated area, defining the coordinate of a circle center point of the wafer as (Xi, Yi), defining Xi = Yi, defining the radius of the wafer as R, and setting the advancing range and speed of a spray head along an X axis; the advancing range and speed of the nozzle along the Y axis are set; the distance a and the point (Xi, Yi) of the spray head in the Y-axis direction are defined to be equal to (R + sigma, R + sigma) after the X-axis direction is finished in the spraying process, the distance a and the point (Xi, Yi) of the spray head in the Y-axis direction after the X-axis direction is finished in the spraying process are defined to be equal to a / n, and n is the number of repetition times of the spraying period. And in the spraying period, the temperature of the heating disc is controlled. And t0 is increased to th. According to the method provided by the invention, the film on the surface of the wafer can be uniform, good and bubble-free, the problem of poor uniformity can be solved by matching with a covering type spray type gluing action, and bubbles deposited on the surface of the photoresist film are reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and more specifically relates to a photoresist spray coating method. Background technique [0002] Semiconductor manufacturing process, including wafer manufacturing, photolithography, etching, diffusion, ion implantation, thin film deposition and other processes. Among them, the photolithography process is an important pattern forming link. Photolithography is a key process in semiconductor manufacturing. Photolithography is the process of transferring the geometric pattern on the mask to the photosensitive film material (commonly known as photoresist) coated on the surface of the semiconductor wafer. The main steps of pattern formation in photolithography are glue coating, exposure and development. Spray coating has the characteristics of high material utilization rate, no influence of substrate morphology, good repeatability and large coating area, and is widely used in photolitho...

Claims

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Application Information

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IPC IPC(8): G03F7/16H01L21/67
CPCG03F7/16H01L21/6715H01L21/67103
Inventor 魏猛王阳李冬海罗宗祥
Owner 芯达半导体设备(苏州)有限公司