GaN HEMT device tri-state driving circuit

Abstract

The invention belongs to the field of power semiconductor device driving, particularly relates to a GaN HEMT device three-state driving circuit, and aims to solve the problem of high loss in a follow current process in dead time due to high reverse conduction voltage drop of a GaN HEMT device. The GaN HEMT three-state driving circuit comprises a GaN HEMT three-state driving circuit, an SR latch is adopted to achieve recognition of dead time after the GaN HEMT is turned off, the gate driving voltage of a GaN HEMT device in the follow-up current stage of turn-off is controlled, the reverse conduction voltage drop of the device is reduced, accordingly, follow current loss is reduced, efficiency is improved, the GaN HEMT is kept in a conventional turn-off state before the GaN HEMT is turned on, and the GaN HEMT is turned off in the normal turn-off state after the GaN HEMT device is turned off. And the driving reliability and flexibility are improved. According to the invention, the problem of large follow current loss caused by relatively high reverse conduction voltage drop is fundamentally solved, and the structure is simple and is not limited by circuit topology.

Description

technical field [0001] The invention belongs to the field of driving power semiconductor devices, and in particular relates to a three-state driving circuit for GaN HEMT devices. Background technique [0002] GaN HEMT devices have broad application prospects in the field of high-efficiency and high-frequency power conversion due to their superior performance such as high breakdown field strength and low on-resistance. The device characteristics of GaN HEMT devices are quite different from those of silicon-based MOSFETs, and its gate drive technology has been a research hotspot in academia and industry in recent years. [0003] GaN HEMT devices are different from silicon-based MOSFETs in that they do not have anti-parallel body diodes. However, although there is no reverse recovery process of body diodes, GaN HEMT devices show a higher turn-on voltage drop during dead time, which will bring additional efficiency loss. like figure 1 As shown, it is a schematic diagram of th...

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Problems solved by technology

[0006] In order to solve the above-mentioned problems in the prior art, that is, the reverse conduction voltage drop of GaN HEMT devices is relatively high, resulting in relatively large losses in the freewheeling process in the dead time, the present invention provides a GaN HEMT device three The three-state drive circuit of the GaN HEMT device includes the input terminal of the PWM1 drive signal, the input terminal of the PWM2 drive signal, the SR latch, the freewheel drive switch tube, the freewheel drive power supply, the conduction drive half bridge, the conduction drive Through drive power supply and freewheel drive anti-reverse diode;

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