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A silicon carbide wafer etching system

A silicon carbide crystal, silicon carbide technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high use cost, adverse effects on the environment and staff health, etc., to achieve strong practicability and protect personnel safety. , the effect of preventing volatilization

Active Publication Date: 2022-07-15
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the problems of the existing silicon carbide wafer etching system, which are high in cost and have adverse effects on the environment and the health of workers, and provide a silicon carbide wafer etching system

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  • A silicon carbide wafer etching system

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Embodiment Construction

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0022] see figure 1 , this embodiment provides a technical solution: a silicon carbide wafer corrosion system, including a work surface, a conveying mechanism, a sealing chamber and an exhaust device;

[0023] The working table includes a plurality of working chambers, and the multiple working chambers are respectively used to automatically perform different functionalization treatments in the etching process of the silicon carbide wa...

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Abstract

The invention relates to the technical field of silicon carbide wafer processing, and discloses a silicon carbide wafer corrosion system, comprising a work surface, a conveying mechanism, a sealing chamber and an exhaust device; the work surface includes a plurality of working chambers, and the sealing chamber is used for The working chamber is sealed to prevent harmful gas leakage; the transfer mechanism is used to automatically transfer the silicon carbide wafers from the sealed chamber to different working chambers for functionalization according to the set program; harmless treatment of harmful gases. The invention integrates the etching process of the silicon carbide wafer on a work surface, and realizes the automation of the silicon carbide wafer in the functionalization process through the automation mechanism; To prevent the volatilization of harmful gases, the staff only needs to take samples and check the corrosion progress through the observation window, avoid contact with high temperature and harmful gases, and maximize the safety of personnel.

Description

technical field [0001] The invention relates to the technical field of silicon carbide wafer processing, in particular to a silicon carbide wafer etching system. Background technique [0002] Silicon carbide is a representative material of the third-generation semiconductor, with a large band gap and high chemical inertness. However, the defects of silicon carbide materials have a direct impact on device performance. Therefore, defects need to be observed and counted in multiple steps such as substrate, processing, epitaxy, and device failure analysis. Dislocation-type defects, as a kind of two-dimensional defects, cannot be observed by ordinary optical microscopes. [0003] Since dislocations are lattice distortions in a crystal, there will be stress concentrations at the dislocations. In a corrosive environment, the dislocation region will preferentially corrode, thereby realizing dislocation exposure. However, due to the strong bonding of silicon carbide crystals and h...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/36
Inventor 王蓉李佳君皮孝东沈典宇王芸霞杨德仁
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT