Etching solution composition and preparation method thereof

Abstract

The invention provides an etching liquid composition and a preparation method thereof, and belongs to the field of etching liquid compositions. The composition comprises hydrogen peroxide, a complexing agent, organic acid, hydrochloric acid, nitric acid, inorganic salt, a copper corrosion inhibitor, a hydrogen peroxide stabilizer and water. The etching liquid composition has the advantages of good morphology after etching, no residue, no damage to ITO, good stability of etching rate, good safety, good stability of hydrogen peroxide and the like.

Description

technical field [0001] The invention belongs to the field of etching liquid compositions, and in particular relates to an etching liquid composition and a preparation method thereof. Background technique [0002] In recent years, due to the rapid development of industries such as semiconductors and display panels, there is not only a strong demand for quantity of electronic chemicals, but also higher and higher requirements for quality. Etching technology is an indispensable process link for semiconductors and display panels. , is also constantly developing and progressing. Among them, wet etching has been used by the industry for a long time as the most effective, stable and extensive etching technology. Metal copper has more excellent electrical conductivity and is widely used as metal interconnection lines. Therefore, the current Most of the etching is carried out around copper or copper alloy. The copper etching solution currently on the market is mainly composed of hydr...

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Problems solved by technology

[0002] In recent years, due to the rapid development of industries such as semiconductors and display panels, there is not only a strong demand for quantity of electronic chemicals, but also higher and higher requirements for quality. Etching technology is an indispensable process link for semiconductors and display panels. , is also constantly developing and progressing. Among them, wet etching has been used by the industry for a long time as the most effective, stable and extensive etching technology. Metal copper has more excellent electrical conductivity and is widely used as metal interconnection lines. Therefore, the current Most of the etching is carried out around copper or copper alloy. The copper etching solution currently on the market is mainly composed of hydrogen peroxide, sulfuric acid and deionized water. The generated copper oxide reacts to generate soluble divalent copper ions. On the one hand, the divalent copper ions generated during the etching process will continue to oxidize metal copper to generate monovalent copper ions due to their own oxidation. With continuous accumulation, the etching rate will become faster and faster and become uncontrollable; on the other hand, copper ions accelerate the decomposition of hydrogen peroxide, thereby shortening the life of the etching solution. At the same time, the temperature of the liquid rises sharply during the process, which may easily lead to safety accidents

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