An electronic fuse circuit with integrated anti-reverse current

Abstract

An integrated anti-reverse current electronic fuse circuit, based on the traditional electronic fuse efuse circuit, includes PMOS transistors PS1, PS2, NMOS transistor NS and output power NMOS transistor Npower and is used to detect the power supply VIN voltage and output voltage VOUT The control circuit of the reverse current protection module, the reverse current protection module outputs control signals V+, V- and substrate potentials VS and VS2 to control PS1, PS2, NS switches and the substrate potentials of Npower, PS1 and PS2. The Npower substrate potential is switched to the lowest potential of the two, forming a body diode reverse bias to avoid reverse current.

Description

technical field [0001] The invention relates to a power management chip of an integrated circuit, in particular to an integrated electronic fuse circuit (efuse) for preventing reverse current. Background technique [0002] As portable electronic products are widely used in all aspects of work and life, they put forward higher requirements on the performance of power supply. Modern electronic systems are designed with high integration to provide excellent performance and multiple functions. These systems use multi-voltage power distribution to support various types of power sources to ensure proper operation of the load. One of the main expectations is to minimize system downtime under any circumstances for transient abnormal events such as overload or short circuit conditions. For example, when a hot-swappable hard drive enters a storage system, the large inrush current can cause a voltage dip on the connecting bus and ultimately affect other operating loads on the same bus...

AI Technical Summary

Problems solved by technology

[0010] Figure 2(a), Figure 2(b), Figure 2(c) and image 3 The disadvantage of the shown efuse circuit against reverse current is that: both use two large power NMOS transistors, and use their body diodes in reverse series to prevent backflow

In order to achieve high current capability, the internal switch on-resistance of efuse is generally less than 50 milliohms, so the two series-connected NMOS transistors need the same area to achieve low on-resistance. For example, to achieve 30 milliohms, two A 15 milliohm NMOS power transistor is added in series, which consumes a huge chip area, and the chip volume and cost are significantly increased.

Images