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Multi-charged particle beam drawing device and multi-charged particle beam drawing method

A technology of charged particle beams and drawing devices, which is applied to exposure devices, circuits, discharge tubes, etc. in photolithography, and can solve the problems of reduced efficiency of parallel processing

Pending Publication Date: 2022-04-22
NUFLARE TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the location of the data required for the correction process to correct defective beams may span multiple blocks
In this case, if data is exchanged between blocks, there is a problem that the efficiency of parallel processing decreases

Method used

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  • Multi-charged particle beam drawing device and multi-charged particle beam drawing method
  • Multi-charged particle beam drawing device and multi-charged particle beam drawing method
  • Multi-charged particle beam drawing device and multi-charged particle beam drawing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0061] figure 1 It is a schematic diagram showing the configuration of the drawing device 100 according to the first embodiment. exist figure 1 Among them, the rendering device 100 includes a rendering mechanism 150 and a control system circuit 160 . The drawing device 100 is an example of a multi-charged particle beam drawing device. The drawing mechanism 150 includes an electron column 102 (multi-electron beam column) and a drawing chamber 103 . An electron gun 201 , an illumination lens 202 , a forming hole array substrate 203 , a blanking hole array mechanism 204 , a reducing lens 205 , a limiting hole substrate 206 , an objective lens 207 , a deflector 208 , and a deflector 209 are arranged in the electron column 102 . An XY stage 105 is arranged in the drawing room 103 . A sample 101 such as a resist-coated mask blank serving as a substrate to be drawn during drawing is placed on the XY stage 105 . The sample 101 includes an exposure mask when manufacturing a semico...

Embodiment approach 2

[0132] In Embodiment 1, a description has been given of a configuration in which determination of the belonging of pixels irradiated with a defect beam is performed using a dose map before positional offset correction, but the present invention is not limited thereto. In Embodiment 2, a description will be given of a configuration in which determination of the belonging of pixels irradiated with a defect beam is performed using a dose map after positional shift correction. The structure and figure 1 same. In addition, the following may be the same as that of Embodiment 1 except for the points described in particular.

[0133] Figure 15 It is a flowchart showing main steps of the drawing method according to the second embodiment. exist Figure 15 In , the contents except the arrow indicating that the dose map used in the determination step S120 to which the defective beam belongs is the position offset correction dose map are the same as Figure 7 same.

[0134] Beam pos...

Embodiment approach 3

[0139] In Embodiments 1 and 2, a configuration in which defect beam correction is performed after making each pixel irradiated with a defect beam belong to one block region 33 with a margin is provided, but the present invention is not limited thereto. In Embodiment 3, the configuration in which defect beam correction may be repeatedly performed will be described.

[0140] Figure 16 It is a schematic diagram showing the configuration of the drawing device according to the third embodiment. exist Figure 16 In the control computer 110, except that the data processing unit 71 and the plurality of defect beam correcting units 76 (76a, 76b, . figure 1 same. Block division unit 50, multiple rasterization units 52 (52a, 52b, . . . ), multiple dose calculation units 54 (54a, 54b, . Shift correction unit 58 (58a, 58b, ...), detection unit 60, dose map creation unit 62, block generation unit 64 with margin, determination unit 66, multiple defective beam correction units 76 (76a, 7...

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PUM

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Abstract

Provided are a multi-charged particle beam drawing device and a multi-charged particle beam drawing method, the device being provided with: a plurality of dose data generation circuits that generate dose data for each position within a drawing region of a sample; a margined block region generation circuit that generates a plurality of margined block regions in which margined regions are added around each block region of the sample; a detection circuit that detects a defective beam; the determination circuit is used for determining the irradiation position of the defect beam; an affiliation determination circuit that determines, in accordance with a condition set in accordance with which of the plurality of sub-block regions the position of the defect beam irradiation belongs, one of the plurality of margin-equipped block regions to which the position of the defect beam irradiation belongs; a defective beam correction circuit that calculates a correction dose at at least one position at which a dose abnormality is corrected, using dose data at each position in the affiliated margin block region; and a drawing mechanism that draws a pattern on the sample using the multi-charged particle beam in which the dose at at least one position at which the dose abnormality is corrected is controlled to a corrected dose.

Description

[0001] This application is based on Japanese Patent Application No. 2020-169019 (filing date: October 6, 2020), and enjoys the priority of the basic application. This application incorporates the entire content of the basic application by referring to the basic application. technical field [0002] One aspect of the present invention relates to a multi-charged particle beam drawing device and a multi-charged particle beam drawing method, for example, relates to a method of reducing a size shift of a pattern caused by multi-beam drawing. Background technique [0003] Photolithography, which is responsible for progress in the miniaturization of semiconductor devices, is an extremely important process for generating unique patterns in semiconductor manufacturing processes. In recent years, along with the high integration of LSIs, the circuit line widths required for semiconductor devices have been reduced year by year. Here, electron beam (electron beam) drawing technology has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/20
CPCH01L21/0274G03F7/2059G03F7/2061H01J37/3177H01J2237/31754H01J2237/31762H01J2237/30455H01J2237/30472H01J37/3045H01J37/244G03F7/70508G03F7/70558G03F7/706835G03F7/2037H01J37/304H01J37/3174
Inventor 加藤靖雄川名亮
Owner NUFLARE TECH INC