Method for accurately guiding growth of high-uniformity diameter nanowires
A nanowire and precise technology, applied in the field of microelectronics, can solve problems such as disordered guidance and uneven thickness of nanowires, and achieve the effect of avoiding disorderly growth
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Embodiment 1
[0043] The embodiment of the present application provides a preparation method for precisely guiding the growth of nanowires with high uniform diameter, such as Figure 1a~1n As shown, the method includes:
[0044] The first step is to alternately deposit silicon oxide film layers (A1) and silicon nitride (A2) film layers to form a substrate layer; the thickness of A1 is 30 nm, and the thickness of A2 is 40 nm, forming a stack in the vertical direction Substrate structure such as Figure 1a As shown, its cross-section is shown in Figure 1b shown.
[0045] The second step is to pattern the above substrate layer and etch the sidewall. Hydrofluoric acid etches the A1 layer to make it concave inwards to form a trench. The structure formed by this step is as follows Figure 1c As shown, its cross-section is shown in Figure 1d shown.
[0046] In the third step, the catalytic metal In is deposited on one side of the trench to form a structure such as Figure 1e As shown, the...
specific Embodiment approach 2
[0052] The embodiment of the present application provides a preparation method for precisely guiding the growth of nanowires with high uniform diameter, such as Figure 2a~2g As shown, the method includes:
[0053] In the first step, the SiO 2 Or photolithographic patterning on the Si substrate defines the target guide groove, and the development exposes the area where the guide groove needs to be defined; the formed structure is as follows Figure 2a shown.
[0054] In the second step, plasma etching is performed on the region of the target guide groove on the substrate base material layer to obtain a close-packed guide groove in a lateral plane. The structure formed by this step is as follows Figure 2b shown.
[0055] The third step is to guide photolithography on one side of the trench to define the adhesion area of catalytic metal In and deposit catalytic metal particles, forming a structure such as Figure 2c shown.
[0056] In the fourth step, the catalytic meta...
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