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Thin film LED chip with vertical structure, micro LED array and preparation method of thin film LED chip

A technology for LED chips and LED arrays, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as yield and reliability need to be improved, uneven current around edges, poor current spreading effect, etc., to improve external quantum efficiency. , Improve product yield, improve the effect of effective area

Pending Publication Date: 2022-05-06
SHANGHAI XINYUANJI SEMICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a thin-film LED chip with a vertical structure, which is used to solve the problem that the current spreading effect in the local area of ​​the thin-film chip is still relatively poor, especially around the edges of the LED chip. Uneven edge current around the position, chip leakage, complex manufacturing process, yield and reliability need to be improved, etc.

Method used

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  • Thin film LED chip with vertical structure, micro LED array and preparation method of thin film LED chip
  • Thin film LED chip with vertical structure, micro LED array and preparation method of thin film LED chip
  • Thin film LED chip with vertical structure, micro LED array and preparation method of thin film LED chip

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Embodiment 1

[0064] This embodiment provides a thin film LED chip with a vertical structure. The thin film LED chip can include an epitaxial light emitting structure, an electrode structure and a reflective layer, and the thin film LED chip is a GaN-based LED chip, an AlGaInP-based LED chip, and a GaAs-based LED chip. chip, but it does not mean that the chip type of the present invention is not limited thereto. The thin film LED chip will be described in detail below by taking a GaN-based LED chip as an example.

[0065] see figure 1 The epitaxial light emitting structure 200 has opposite first and second main surfaces 200 a and 200 b, and includes an N-type GaN layer 201 , a light-emitting layer 202 and a P-type GaN layer 203 stacked in sequence. The N-type GaN layer 201 can be heteroepitaxially grown from a growth substrate. For example, the growth substrate is Al 2 o 3 substrate. The light emitting layer 202 is located on the N-type GaN layer 201 , and the P-type GaN layer 203 is l...

Embodiment 2

[0071] see figure 2 , the present embodiment provides a micro-LED array and a preparation method thereof, the preparation method comprising the following steps:

[0072] 1) providing a growth substrate, forming an epitaxial light-emitting structure on the growth substrate, including sequentially forming an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer, and performing an etching process to form a first stepped structure;

[0073] 2) Etching to the surface of the growth substrate along the scribe line to define a single chip particle;

[0074] 3) forming a current blocking layer and a passivation layer on the surface of the epitaxial light emitting structure, and forming a P electrode on the first main surface of the epitaxial light emitting structure;

[0075] 4) forming an N electrode on the first stepped structure;

[0076] 5) providing a conductive substrate with a bonding layer formed on the upper surface, and transferring the array of ligh...

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Abstract

The invention provides a thin-film LED chip with a vertical structure, and the chip comprises an epitaxial light-emitting structure which is provided with a first main surface and a second main surface which are opposite, and comprises an N-type epitaxial layer, a light-emitting layer and a P-type epitaxial layer which are stacked in sequence, and the epitaxial light-emitting structure is provided with a first step structure penetrating to the surface of the N-type epitaxial layer; the N electrode is arranged on the first step structure of the N-type epitaxial layer, the N electrode comprises a main body part and an extension part, the N electrode is in electrical contact with the upper surface of the first step structure through the main body part, and the extension part is formed around the side wall of the N-type epitaxial layer; and the P electrode is arranged on the first main surface of the epitaxial light-emitting structure. The invention further provides a micro LED array. According to the thin film LED chip, the problem that the current expansion uniformity of the peripheral edge in the existing chip structure is poor can be solved, and the current expansion uniformity and the effective reflection area of the chip are improved, so that the luminous efficiency of the chip is improved to the greatest extent.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and manufacture, and in particular relates to a thin-film LED chip with a vertical structure. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. [0003] Existing LED chips can be classified according to the positions of the electrodes: a flip-chip structure, a vertical chip structure and a front-mount chip structure. Among them, in the vertical LED chip structure, two electrodes are located at the upper and lower ends of the epitaxial layer. In this chip structure, the current distribution is ...

Claims

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Application Information

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IPC IPC(8): H01L33/38H01L33/40H01L33/44H01L33/46H01L27/15H01L33/00
CPCH01L33/385H01L33/405H01L33/0062H01L33/46H01L33/44H01L27/156H01L2933/0025H01L2933/0016
Inventor 郝茂盛陈朋袁根如张楠马艳红闫鹏马后永
Owner SHANGHAI XINYUANJI SEMICON TECH
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