Thin film LED chip with vertical structure, micro LED array and preparation method of thin film LED chip
A technology for LED chips and LED arrays, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as yield and reliability need to be improved, uneven current around edges, poor current spreading effect, etc., to improve external quantum efficiency. , Improve product yield, improve the effect of effective area
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Embodiment 1
[0064] This embodiment provides a thin film LED chip with a vertical structure. The thin film LED chip can include an epitaxial light emitting structure, an electrode structure and a reflective layer, and the thin film LED chip is a GaN-based LED chip, an AlGaInP-based LED chip, and a GaAs-based LED chip. chip, but it does not mean that the chip type of the present invention is not limited thereto. The thin film LED chip will be described in detail below by taking a GaN-based LED chip as an example.
[0065] see figure 1 The epitaxial light emitting structure 200 has opposite first and second main surfaces 200 a and 200 b, and includes an N-type GaN layer 201 , a light-emitting layer 202 and a P-type GaN layer 203 stacked in sequence. The N-type GaN layer 201 can be heteroepitaxially grown from a growth substrate. For example, the growth substrate is Al 2 o 3 substrate. The light emitting layer 202 is located on the N-type GaN layer 201 , and the P-type GaN layer 203 is l...
Embodiment 2
[0071] see figure 2 , the present embodiment provides a micro-LED array and a preparation method thereof, the preparation method comprising the following steps:
[0072] 1) providing a growth substrate, forming an epitaxial light-emitting structure on the growth substrate, including sequentially forming an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer, and performing an etching process to form a first stepped structure;
[0073] 2) Etching to the surface of the growth substrate along the scribe line to define a single chip particle;
[0074] 3) forming a current blocking layer and a passivation layer on the surface of the epitaxial light emitting structure, and forming a P electrode on the first main surface of the epitaxial light emitting structure;
[0075] 4) forming an N electrode on the first stepped structure;
[0076] 5) providing a conductive substrate with a bonding layer formed on the upper surface, and transferring the array of ligh...
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