Silicon wafer processing method and device
A processing method and processing device technology, applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve the problems of many chemicals, large environmental impact, poor quality of silicon wafer micro-velvet surface, etc., and achieve enhanced trapping Light effects, quality-enhancing effects, and purity-enhancing effects
Pending Publication Date: 2022-05-10
LONGI GREEN ENERGY TECH CO LTD
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Problems solved by technology
[0004] This application aims to provide a silicon wafer processing method and device to solve the problem that the existing silicon wafer processing method consumes more chemicals and water, has a greater impact on the environment, and the quality of the micro suede surface of the silicon wafer is poor. question
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[0040] Embodiments of the present invention will be described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.
[0041] The features of the terms "first" and "second" in the description and claims of the present application may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "plurality" means two or more. In addition, "and / or" in the specification and claims means at...
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Abstract
The embodiment of the invention provides a silicon wafer processing method and device. The silicon wafer processing method comprises the following steps: polishing a silicon wafer to remove a damaged layer on the surface of the silicon wafer; reaction gas is provided, and the reaction gas at least comprises oxygen and halogen-containing gas; and reacting the oxygen and the halogen-containing gas with the surface of the silicon wafer at a first preset temperature to form a micro textured surface on the surface of the silicon wafer, and removing metal impurities from the silicon wafer. According to the embodiment of the invention, the consumption of chemicals and water resources can be reduced, the influence of the manufacturing process of the micro suede of the silicon wafer on the environment is reduced, the damage to the silicon wafer and the micro suede of the silicon wafer is avoided, and the formation of a microstructure with a higher coverage rate and a higher aspect ratio is facilitated, so that the light trapping effect of the micro suede is enhanced, and the quality of the micro suede is improved. In addition, metal impurities on the surface of the silicon wafer can be removed, and the purity of the silicon wafer is improved.
Description
technical field [0001] The application belongs to the technical field of photovoltaics, and in particular relates to a silicon wafer processing method and device. Background technique [0002] In recent years, by reducing the cost of photovoltaic power generation and increasing the proportion of photovoltaic power generation, the goal of carbon neutrality can be achieved and the proportion of clean energy connected to the grid can be increased. Improving the conversion efficiency of solar cells can reduce the cost of solar cells, reduce the scale of power stations, land costs, and construction costs, thereby reducing the cost of photovoltaic power generation. In a specific application, the optical loss of the solar cell can be effectively reduced by making a micro-velvet surface on the surface of the silicon wafer of the solar cell, so as to improve the conversion efficiency of the solar cell. [0003] In the existing technology, reactive ion etching or laser etching is usu...
Claims
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IPC IPC(8): H01L31/18H01L31/0236C30B33/12C30B29/06
CPCH01L31/1804H01L31/02366C30B33/12C30B29/06
Inventor 邓浩韩伟
Owner LONGI GREEN ENERGY TECH CO LTD