Manufacturing method of fast recovery diode and fast recovery diode
A technique for recovering diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. It can solve the problems of high manufacturing costs and expensive hydrogen ion implantation machines, so as to reduce manufacturing costs and improve soft recovery performance effect
Inactive Publication Date: 2022-05-13
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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[0035] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention. It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout. It will be understood that when an element or layer is referred to as being "on" or...
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Abstract
The invention provides a manufacturing method of a fast recovery diode and the fast recovery diode, and the structure of a second metal electrode, a first conductive type film layer, a first conductive type semiconductor substrate, a first conductive type semiconductor epitaxial layer, a second conductive type film layer and a first metal electrode which are sequentially stacked from bottom to top is formed. Wherein primary epitaxy is carried out on the front surface of a semiconductor substrate of a first conduction type, and ion implantation of a second conduction type is carried out on the surface layer of the front surface of a semiconductor epitaxial layer formed by epitaxy without repeated hydrogen ion implantation, so that the manufacturing cost can be greatly reduced, and meanwhile, a negative temperature coefficient is not easy to cause; the method is suitable for large-current parallel application. And the semiconductor substrate can be used as a device buffer layer after the back surface is thinned, so that the soft recovery performance and the reverse recovery failure performance of the device are improved.
Description
technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method for manufacturing a fast recovery diode and the fast recovery diode. Background technique [0002] Fast Recovery Diode (FRD) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in electronic circuits such as switching power supplies, PWM pulse width modulators, and frequency converters. Rectifier diodes, freewheeling diodes or damping diodes are used. Its internal structure is different from ordinary diodes. It has a base region I added between the N-type material layer and the P-type material layer to form a P-I-N structure. [0003] At present, in the semiconductor industry, there are mainly two manufacturing methods of FRD: [0004] (1) Perform two epitaxy on the N+ substrate, first epitaxial N-buffer layer, then epitaxial N-high resistance layer, and perform P-type doping in the...
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Login to View More IPC IPC(8): H01L21/329H01L29/06H01L29/861
CPCH01L29/66136H01L29/8613H01L29/0684
Inventor 徐旭东陆珏
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP