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High-performance simulation method for simulating total dose effect of MOSFET device

A technology of total dose effect, simulation method, applied in the direction of instrument, special data processing application, calculation, etc., can solve the problems of increasing the number of iterations, non-convergence, etc., to achieve good stability, improve convergence speed, and low grid complexity. Effect

Pending Publication Date: 2022-05-17
ZHEJIANG UNIV
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Problems solved by technology

However, its convergence rate is linear, it is usually used to simulate low-doped semiconductor devices, it may not converge under high injection and avalanche scenarios, and its number of iterations increases with the increase of applied voltage

Method used

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  • High-performance simulation method for simulating total dose effect of MOSFET device
  • High-performance simulation method for simulating total dose effect of MOSFET device
  • High-performance simulation method for simulating total dose effect of MOSFET device

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Embodiment Construction

[0076] The present invention will be described in further detail below in conjunction with the accompanying drawings. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0077] 1. The carrier drift-diffusion model in semiconductor devices can be described by partial differential equations such as Poisson's equation, carrier current continuity equation and carrier drift-diffusion equation.

[0078] The Poisson equation can be expressed as:

[0079]

[0080] The current continuity equation can be expressed as:

[0081]

[0082] The drift-diffusion equation can be expressed as:

[0083]

[0084] where ε is the dielectric constant of silicon, φ is th...

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Abstract

The invention discloses a high-performance simulation method for simulating the total dose effect of an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device, and provides internal and external electric information of the MOSFET device under the action of the total dose effect. According to the method, firstly, a geometric model of an MOSFET device is subdivided through a free hexahedral mesh; secondly, dispersing the drift-diffusion equation set by adopting a control volume finite element method (CVFEM), and performing interpolation calculation on a flux item of the drift-diffusion equation set through a hexahedral vector primary function, a finite difference method and a Scharfer-Gummel (SG) method; and finally, solving the discrete drift-diffusion equation set by adopting a Newton iteration method to obtain potential and carrier concentration field information in the MOSFET device, and performing post-processing to obtain a current-voltage curve of the MOSFET device. The simulation method disclosed by the invention has the advantages of high confidence coefficient, high numerical precision, high numerical stability, expandability and the like. The method can be used for high-efficiency and high-precision numerical simulation of the total dose and other multi-physical effects of the MOSFET device, so that the performance, robustness and reliability of an integrated circuit are improved.

Description

technical field [0001] The invention relates to a high-performance simulation method for simulating the total dose effect of semiconductor devices in the field of chips, in particular to an integrated circuit numerical simulation method designed for MOSFET devices. Background technique [0002] Numerical simulation is a practical computer-aided design tool today, which can be used to solve the carrier drift-diffusion transport process in semiconductor devices, and solve many problems with huge calculation, complex structure, and difficult to obtain accurate results by analytical methods. Prior art, the Chinese invention patent "PIN limiter electrothermal integration analysis method under the action of high-power electromagnetic pulse" (public number: CN105718618A) discloses a numerical simulation method of PIN limiter under the action of high-power electromagnetic pulse, the method The semiconductor drift-diffusion equations were calculated by using the time-domain spectral ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/3308
CPCG06F30/3308
Inventor 尹文言李谭毅詹启伟陈文超
Owner ZHEJIANG UNIV
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