Thick copper etching composition and application thereof

Abstract

The invention relates to the field of semiconductor wafer packaging, in particular to a hydrogen peroxide system copper etching composition used in a wet etching process, and particularly relates to a thick copper etching composition and application thereof. The thick copper etching composition at least comprises the following components in percentage by weight: 1-20wt% of a component A, 1-30wt% of a component B and a component C, the component A is an oxidizing agent; the component B is inorganic acid and/or organic acid; and the component C is deionized water. The etching composition provided by the invention has the advantages of high stability, long etching life and large sheet running amount, the utilization rate of the etching composition is effectively improved, and only copper can be selectively etched; in addition, the etching composition also has the advantages of extremely low lateral erosion amount, good etching selection ratio, excellent etching uniformity, relatively high etching stability, relatively high etching rate stability, relatively long service life and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer packaging, in particular to a hydrogen peroxide system copper etching composition used in a wet etching process, in particular to a thick copper etching composition and application thereof. Background technique [0002] Wet etching is a common method for obtaining thin precision microelectronic products in the semiconductor industry. It includes the following three steps: 1. The metal etching composition is diffused to the surface of the metal material to be etched; The metal material undergoes a chemical reaction; 3. The reacted product diffuses into the solution from the surface of the etched metal material. As a commonly used etching composition system, the metal copper etching composition of hydrogen peroxide system has the advantages of stable etching rate and easy control, large etching metal capacity, simple post-processing cleaning, etc., and is widely used in the field of wet ...

AI Technical Summary

Problems solved by technology

[0003] In the prior art, when the thick copper layer is etched, there are often the following problems: 1. The etching composition commonly used in the prior art will significantly attack the metal copper in the edge region of the lower layer covered by the photoresist, causing undercut (undercut) problems , which in turn leads to the inability of the photoresist to adhere effectively, resulting in the photoresist falling off, which may cause the substrate to fail to form an effective pattern; 2. Because the thickness of the thick copper layer is too large (the thickness of the copper layer is above 2 μm), it will cause the reaction during etching If the reaction is too violent, a large number of bubbles will be produced, resulting in poor etching uniformity, and metal residues will appear in the area where the photoresist is not attached, which will not be able to be etched effectively, which will affect the subsequent process.

[0004] In order to solve the above technical problems, a thick copper etching composition is provided, which can effectively solve the problems of poor etching uniformity of the existing thick copper etching composition, easy generation of metal copper residue, poor stability, and low utilization rate of the etching composition; at the same time It can also solve the problem of excessive copper corrosion on the edge of the lower layer of photoresist in the prior art, effectively maintain the pattern structure of metal copper, ensure the stability of the substrate manufacturing process, and improve the yield of the substrate

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