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Ultrathin metal interlayers for improved injection electron transport layers

An electron transport layer, ultra-thin metal technology, applied in nanotechnology, circuits, electrical components, etc. for materials and surface science, which can solve problems such as high operating voltage, energy level mismatch, low external quantum efficiency, etc.

Pending Publication Date: 2022-05-27
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although figure 1 A related art device 100 shown in , which achieves a highly transparent, high-conductivity electrode, is a drawback of the device that ITO NPs interact with magnesium-doped zinc oxide (MgZnO), aluminum-doped zinc oxide (AlZnO), gallium-doped zinc oxide (GaZnO) or there is an energy level mismatch between the public ETLs of zinc oxide (ZnO)
This mismatch between energy levels leads to poor injection between the TCE layer and the ETL layer and can lead to lower external quantum efficiency (EQE) and higher operating voltage

Method used

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  • Ultrathin metal interlayers for improved injection electron transport layers
  • Ultrathin metal interlayers for improved injection electron transport layers
  • Ultrathin metal interlayers for improved injection electron transport layers

Examples

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Embodiment Construction

[0041] The following description contains specific information related to example implementations in the present disclosure. The drawings and their accompanying detailed description are directed to example embodiments. However, the present invention is not limited to these exemplary embodiments. Other variations and embodiments of the present disclosure will occur to those skilled in the art. Unless otherwise indicated, the same or corresponding elements in the figures may be represented by the same or corresponding reference numerals. Furthermore, the drawings and illustrations are generally not to scale and are not intended to correspond to actual relative dimensions.

[0042] For consistency and ease of understanding, similar features are identified by numerals in the exemplary drawings (although not shown in some instances). However, features in different embodiments may differ in other respects and are therefore not to be narrowly limited to what is shown in the figure...

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Abstract

The light emitting device includes: a first electrode; an electron transport layer (ETL); a second electrode which is a transparent conductive electrode (TCE) comprising conductive nanoparticles; an emission layer (EML) in electrical contact with the first electrode and the second electrode; and an ultra-thin metal layer between the TCE and the ETL, wherein the ultra-thin metal layer provides an energy step between the TCE and the ETL.

Description

technical field [0001] The present disclosure relates to a quantum dot (QD) light emitting diode (QLED) device comprising an ultra-thin metal layer between a transparent conductive electrode (TCE) and an electron transport layer (ETL), the metal layer improving orientation with minimal loss of transparency Charge injection in ETL. Background technique [0002] A basic QLED device includes at least one electroluminescent QD (light emitting) layer (EML) between an anode and a cathode. Basic QLEDs may also include an ETL between the cathode and the EML and a hole transport layer (HTL) between the EML and the anode. The basic QLED may further include an electron injection layer (EIL) between the cathode and the ETL and a hole injection layer (HIL) between the HTL and the anode. Layers of basic QLEDs can be deposited on the substrate. The substrate may be transparent and formed of rigid or flexible material. The substrate may have a thin film transistor (TFT) structure for dr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K50/16H10K2102/00H10K59/80518H10K59/80524H10K59/80522H10K50/115H10K2102/321H10K50/828H10K50/11H10K50/816H10K50/814H10K50/824H10K2101/40H10K2102/331H10K2102/351
Inventor H·霍普金
Owner SHARP KK