Broadband high-power amplifier based on temperature compensation

Abstract

The invention relates to a broadband high-power amplifier structure based on temperature compensation, and belongs to the field of high-power amplifiers. The structure comprises two parts: one part is a temperature compensation part which comprises a voltage linear reduction circuit, a voltage equal-ratio amplification circuit and a resistance voltage division circuit; and the high-power amplifier part comprises a power distribution / synthesis network and two power amplifier branches. Wherein the temperature compensation part can enable the output voltage to linearly change along with the temperature, then the output voltage is stably amplified, and distribution of the output voltage is adjusted according to requirements. The power distribution / synthesis network adopts a Wilkinson structure; the two power amplifier branches adopt a multi-section lambda / 4 stepped impedance conversion network, and the filtering performance is achieved while the bandwidth is widened. The temperature compensation circuit is designed for the problem that the direct current characteristic of the high-power amplifier deteriorates under the high-temperature condition, the direct current characteristic of the high-power amplifier is improved, and therefore the efficiency, gain, power and other performance of the high-power amplifier are optimized.

Description

technical field [0001] The invention belongs to the field of high-power amplifiers and relates to a wide-band high-power amplifier based on temperature compensation. Background technique [0002] Today, high power amplifiers have important applications in wireless communications and test instrumentation. For example, when performing long-distance high-data transmission, the power amplifier used in the wireless communication system needs to have higher linear output power to support data transmission; similarly, the most typical test in the field of test equipment is automotive EMC testing Power amplifier, the biggest feature of the power amplifier used in the test is high power, which is used to meet the needs of the test system. [0003] AlGaN / GaN materials are the most widely used materials for high power amplifiers. When a GaN HEMT works at a large drain voltage, it will generate a certain amount of power dissipation, and this part of the dissipated power will generate ...

AI Technical Summary

Problems solved by technology

When a GaN HEMT works at a large drain voltage, it will generate a certain amount of power dissipation, and this part of the dissipated power will generate corresponding heat inside the device, making the junction temperature of the device have a very obvious The rise of the junction temperature will not only affect the DC characteristics of the device, but also accelerate the failure of the device itself

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