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Semiconductor device, and rectifying element and alternator using same

A technology of alternators and rectifier components, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., which can solve problems such as smaller mounting area and high-output limitations of alternators, and achieve reliable sex enhancing effect

Pending Publication Date: 2022-06-03
HITACHI POWER SEMICON DEVICE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] When a Zener diode is mounted in parallel with a MOSFET in order to dissipate surge energy, the mounting area of ​​the MOSFET is correspondingly reduced, so there is a limit to increasing the output of the alternator

Method used

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  • Semiconductor device, and rectifying element and alternator using same
  • Semiconductor device, and rectifying element and alternator using same
  • Semiconductor device, and rectifying element and alternator using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] refer to Figure 1 to Figure 3 , the Zener diode built-in MOSFET according to the first embodiment of the present invention will be described. figure 1 The cross-sectional structure of the MOSFET with built-in Zener diode of this embodiment is shown. figure 2 Shows the avalanche current when a surge occurs. image 3 The chip plan view of the Zener diode built-in MOSFET of this embodiment is shown, figure 1 as well as figure 2 and image 3 The A-A' cross-sections are comparable.

[0045] like figure 1 As shown, the MOSFET with built-in Zener diode of this embodiment has the active region of the MOSFET and the peripheral region outside it. In the active region, an n+ substrate 201 and an n- epitaxial layer 202 are formed on the drain electrode 221 , and a p-type channel layer 203 is formed on the n- epitaxial layer 202 . Furthermore, a trench gate 210 is formed which penetrates the p-type channel layer 203 from the semiconductor surface and reaches the n- epit...

Embodiment 2

[0063] refer to Figure 4 as well as Figure 5 , the Zener diode built-in MOSFET according to the second embodiment of the present invention will be described. Figure 4 The cross-sectional structure of the MOSFET with built-in Zener diode of this embodiment is shown. Figure 5 Shows the avalanche current when a surge occurs.

[0064] like Figure 4 As shown, the feature of the MOSFET with built-in Zener diode in this embodiment is that the inner peripheral portion of the active region where the Zener diode 230 is provided is provided at the lower portion of the copper block 250 . That is, the first region (inner peripheral portion of the active region) is arranged only directly below the copper terminal (copper block 250 ) for wiring provided in the opening of the protective film 242 .

[0065] In other words, in Example 1 ( figure 1 ), the Zener diode 230 is also provided in the opening of the protective film 242 and in the region where the copper block 250 is not prov...

Embodiment 3

[0068] refer to Figure 6 to Figure 10 , the rectifying element for an alternator and an alternator according to Embodiment 3 of the present invention will be described.

[0069] Image 6 A plan view of the rectifier element 100 for an alternator on which the MOSFET with built-in Zener diode of the present invention described in the first or second embodiment is shown is shown. Figure 7 A B-B' section of the rectifier element 100 is shown, Figure 8 A C-C' section of the rectifier element 100 is shown. in addition, Figure 9 A circuit diagram showing the rectifier element 100, Figure 10 A circuit diagram of an alternator equipped with the rectifier element 100 is shown.

[0070] The rectifier element 100 of this embodiment is as follows Figures 6 to 8 As shown, a base electrode 101 having a circular outer peripheral portion, a pedestal 102 provided on the base electrode 101 , and a rectangular (rectangular) inner package 300 provided on the pedestal 102 are provided.

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PUM

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Abstract

Provided is a semiconductor device which is provided with a Zener diode built-in MOSFET, and which is capable of achieving both an increase in surge tolerance and a low on-resistance. In a semiconductor device including a MOSFET with a built-in Zener diode, the semiconductor device is characterized by including: an active region in which the MOSFET operates; and a peripheral region disposed outside the active region and configured to maintain a withstand voltage of a peripheral portion of the chip, the active region having: a first region including a chip center portion; and a second region disposed on the outside of the first region, the withstand voltage of the first region being lower than the withstand voltage of the second region and the withstand voltage of the peripheral region.

Description

technical field [0001] The present invention relates to the structure of a semiconductor device, and particularly to a technique that is effectively applied to a semiconductor device for power control which is mounted on an in-vehicle alternator (alternator) and the like and is required to have high reliability. Background technique [0002] An alternator that generates power in an automobile is provided with a rectifier circuit that rectifies the generated AC voltage, converts it into a DC voltage, and charges a battery. As a rectifier element used in this rectifier circuit, a diode has hitherto been used. [0003] In the rectifier element using a diode, for example, as disclosed in Patent Document 1, the terminals on the upper surface of the diode chip are connected to lead electrodes, and the terminals on the lower surface of the diode chip are connected to the base electrodes. The outer shape of the package formed of the base electrode is circular, and the circular pack...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/866H01L27/06H01L29/06H01L23/48H01L25/16H02M7/217
CPCH01L29/7813H01L29/866H01L23/48H01L27/0629H01L29/0619H01L25/16H02M7/217H02M7/219H02M7/003H01L29/7808H01L29/7811H01L29/41766H01L29/0638H01L2224/0603H01L24/49H01L2224/04026H01L2224/04042H01L2224/32245H01L2924/19041H01L2924/19105H01L2224/33181H01L2224/48247H01L2224/73265H01L23/4334H01L23/49589H01L2224/48137H01L2224/73215H01L2224/26145H01L2224/291H01L23/49562H01L23/49575H01L2924/00014H01L2224/48091H01L24/48H01L24/06H01L2924/14H01L2924/13091H01L2924/12035H01L24/01H01L24/33H01L24/32H01L2924/181H01L2924/014H01L2224/45099H01L2924/00012H01L27/0211H01L25/165H01L23/3135H01L2224/48245H01L27/0727
Inventor 白石正树坂野顺一
Owner HITACHI POWER SEMICON DEVICE