Apparatus for processing substrate and method for processing substrate

Abstract

The inventive concept provides a substrate processing apparatus. According to the inventive concept, a substrate processing apparatus processes a rotating substrate by supplying a processing liquid on the substrate. The exhaust unit that exhausts the atmosphere of the internal space includes: a first exhaust port that introduces the atmosphere of the internal space; a first exhaust line provided to discharge the atmosphere introduced through the first exhaust port in a first direction, and a second exhaust port to introduce the atmosphere of the internal space; and a second exhaust line provided to exhaust the atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit such that an exhaust direction inside the first exhaust line and the second exhaust line becomes a forward direction with respect to a rotation direction of the substrate.

Description

technical field [0001] Embodiments of the inventive concepts described herein relate to apparatuses and methods for processing substrates, and more particularly, to apparatuses and methods for processing substrates by supplying liquid onto rotating substrates. Background technique [0002] Various processes such as a photolithography process, an etching process, an ashing process, a thin film deposition process, and a cleaning process are performed to manufacture a semiconductor device or a flat panel display panel. Among these processes, the photolithography process includes supplying a photoresist to a semiconductor substrate to form a photoresist film on the surface of the substrate, exposing the photoresist film using a photomask, and then supplying a developer to selectively A portion of the photoresist film is removed. [0003] figure 1 is a cross-sectional view schematically showing a substrate processing apparatus for applying photoresist to a substrate, and figu...

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Problems solved by technology

[0006] In this case, the amount of exhaust gas deviates between the area where the first exhaust port 961 is provided and the area where the second exhaust port 963 is provided in the internal space 901, which affects the difference between the areas of the substrate. Uniformity of coating film thickness of photoresist

[0007] In addition, as the exhaust gas flowing through the first exhaust line 962 and the exhaust gas flowing through the second exhaust line 964 are connected to each other at the point where the first exhaust line 962 and the second exhaust line 964 are connected to the common duct 966 Collision, flow resistance increases, and the atmosphere is not discharged from the inner space 901 of the processing container 920 in a predetermined volume, so a process error occurs

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