Semiconductor device
A semiconductor and device technology, applied in the field of semiconductor devices, which can solve problems such as interference
Pending Publication Date: 2022-07-01
ZHEJIANG HIKSTOR TECHOGY CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
Although the magnetic tunnel junction has many significant advantages under the current process conditions, the core storage unit of the current MRAM memory generally uses a magnetic tunnel junction with vertical magnetization characteristics. Therefore, it is susceptible to interference from external magnetic fields
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Embodiment Construction
[0040]In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0041] In order to facilitate understanding of the semiconductor device provided by the embodiment of the present invention, the following first describes an application scenario of the semiconductor device provided by the embodiment of the present invention. The semiconductor device is in a memory using a magnetic tu...
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A semiconductor device includes a substrate on which a first conductive structure pattern and an array of magnetic tunnel junctions over the first conductive structure pattern are disposed, and each magnetic tunnel junction is electrically connected to the first conductive structure pattern through a first contact plug. A second conductive structure pattern is further arranged on the substrate, the second conductive structure pattern is located above the magnetic tunnel junction array, and each magnetic tunnel junction is electrically connected with the second conductive structure pattern through a second contact plug. A part or all of the first conductive structure pattern, the second conductive structure pattern, the first contact plug and the second contact plug contain a magnetic shielding material. The magnetic shielding material is arranged in the vicinity of each magnetic tunnel junction for magnetic shielding, so that the magnetic shielding effect of each magnetic tunnel junction can be improved. And when the conductive structure pattern and the contact plug are processed, the magnetic shielding material can be added into the conductive structure pattern and the contact plug, so that the processing technology can be simplified.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor device. Background technique [0002] Magnetic random access memory MRAM (Magnetic Random Access Memory, a non-volatile magnetic random access memory), which has developed rapidly in recent years, has excellent characteristics. It overcomes the shortcomings of SRAM (Static Random-Access Memory) with large area and large leakage after size reduction; it also overcomes the need for DRAM (Dynamic Random Access Memory, dynamic random access memory) to always perform data refresh, The disadvantage of high power consumption. Compared with Flash memory (flash memory), magnetic random access memory (MRAM) has several orders of magnitude superior read and write time and read and write times. [0003] Magnetic Tunnel Junction (MTJ) is used as a carrier for information storage in MRAM, and the relative magnetization states of the free layer and the refe...
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Patent Timeline
Login to View More IPC IPC(8): H01L27/22H01L23/552H01L23/532H01L23/48
CPCH01L23/53209H01L23/481H01L23/552H10B61/22H01L23/532H01L23/48H10B61/00H10N59/00H10N50/10
Inventor 韩谷昌哀立波杨晓蕾王明张恺烨
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD